MODELING AND SIMULATION OF MOS …

MODELING AND SIMULATION OF MOSTRANSISTOR MISMATCHG regor Cijan1, Tadej Tuma2, Arp ad B urmen31 Regional Development Agency of Northern Primorska,5290 Sempeter pri Gorici, Mednarodni prehod 4, Slovenia2,3 University of Ljubljana, Faculty of Electrical Engineering1000 Ljubljana, Tr za ska 25, Cijan)AbstractThe paper is an overview of MOS transistor mismatch MODELING and SIMULATION over the ex-istent literature. The fluctuations of physical parameters and line width are the main causes ofmismatch. There are two types of mismatch . Systematic mismatch can be reduced to greatextent with proper layout. Different patterns are available, that are able to reduce from linearto n-th order polynomial systematic mismatch . Stochastic mismatch can only be reduced withbetter process control and larger transistor areas. There are different approaches for calculatingthe standard deviation representing stochastic mismatch .

MODELING AND SIMULATION OF MOS TRANSISTOR MISMATCH Gregor Cijan1, Tadej Tuma2, Arp´ ad B´ urmen¨ 3 1 Regional Development Agency of Northern Primorska, 5290 Sempeter pri Gorici, Mednarodni prehod 4, Sloveniaˇ

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  Simulation, Transistor, And simulation of mos, And simulation of mos transistor mismatch, Mismatch

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