MOS Transistor - Chenming Hu

1956 MOS TransistorCHAPTER OBJECTIVESThis chapter provides a comprehensive introduction to the modern MOSFETs in their onstate. (The off state theory is the subject of the next chapter.) It covers the topics ofsurface mobility, body effect, a simple IV theory, and a more complete theory applicableto both long- and short-channel MOSFETs. It introduces the general concept of CMOS circuit speed and power consumption, voltage gain, high-frequency operation, andtopics important to analog circuit designs such as voltage gain and noise. The chapterends with discussions of DRAM, SRAM, and flash nonvolatile memory MOSFET is by far the most prevalent semiconductor device in ICs.

Modern MOSFET technology has advanced continually since its beginning in the 1950s. Figure 6–5 is a transmission electron microscope view of a part of a MOSFET. It shows the poly-Si gate and the single-crystalline Si body with visible individual Si atoms and a 1.2 nm amorphous SiO 2 film between them. 1.2 nm is the size of four SiO 2 molecules.

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PN and Metal–Semiconductor Junctions

www.chu.berkeley.edu

4.1 Building Blocks of the PN Junction Theory 93 (4.1.2) The built-in potential is determined by N a and N d through Eq. (4.1.2). The larger the N a or N d is, the larger the φbi is.Typically, φbi is about 0.9 V for a silicon PN junction. Since a lower E c means a higher voltage (see Section 2.4), the N side is at a higher voltage or electrical potential than the P side.

Device Fabrication Technology1 - Chenming Hu

www.chu.berkeley.edu

starting material. A large wafer fab can process 40,000 silicon wafers into circuits each month. The simple example of the device fabrication process shown in Fig. 3–1 includes (a) formation of an SiO 2 layer, (b) its selective removal, (c) introduction of dopant atoms into the wafer surface, and (d) dopant diffusion into silicon. VLSI! ULSI!

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MOS Capacitor - Chenming Hu

www.chu.berkeley.edu

1.5 nm. One nanometer is equal to 10 Å, or the size of a few oxide molecules. Before 1970, the gate was typically made of metals such as Al (hence the M in MOS). After 1970, heavily doped polycrystalline silicon (see the sidebar, Three Kinds of Solid, in Section 3.7) has been the standard gate material because of its ability to

Section, Molecules, Section 3

Bipolar Transistor

www.chu.berkeley.edu

It was the first mass produced transistor, ahead of the MOS field-effect transistor (MOSFET) by a decade. After the introduction of metal-oxide-semiconductor (MOS) ICs around 1968, the high-density and low-power advantages of the MOS technology steadily eroded the BJT’s early dominance. BJTs are still pref erred in some high-frequency and analog

Metal, Transistor, Semiconductors, Oxide, Metal oxide semiconductor

MOSFETs in ICs—Scaling, Leakage, and Other Topics

www.chu.berkeley.edu

The electron and hole mobility can be raised (or lowered) by carefully engineered mechanical strains. The strain changes the lattice constant of the silicon crystal and therefore the E–k relationship through the Schrodinger’s wave equation. The E–k relationship, in turn, determines the effective mass and the mobility.

Electron, Mobility

Electrons and Holes in Semiconductors

www.chu.berkeley.edu

every silicon atom has four other silicon atoms as its nearest neighbor atoms. This fact is illustrated in Fig. 1–2 with the darkened cluster of a center atom having four neighboring atoms. This cluster is called the primitive cell. Silicon is a group IV element in the periodic table and has four valence electrons. These four electrons

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Motion and Recombination of Electrons and Holes

www.chu.berkeley.edu

collisions is typically 10–13s or 0.1 ps (picosecond), and the distance between collisions is a few tens of nanometers or a few hundred angstroms. The net thermal velocity (averaged over time or over a large number of carriers at any given time) is zero. Thus, thermal motion does not create a steady electric current, but it does introduce a

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