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PN and Metal–Semiconductor Junctions

Page 89 Friday, February 13, 2009 5:54 PM. 4. PN and Metal Semiconductor Junctions CHAPTER OBJECTIVES. This chapter introduces several devices that are formed by joining two different materials together. PN junction and metal semiconductor junction are analyzed in the forward- bias and reverse-bias conditions. Of particular importance are the concepts of the depletion region and minority carrier injection. Solar cells and light-emitting diode are presented in some detail because of their rising importance for renewable energy generation and for energy conservation through solid-state lighting, respectively. The metal semiconductor junction can be a rectifying junction or an ohmic contact. The latter is of growing importance to the design of high-performance transistors.

4.1 Building Blocks of the PN Junction Theory 93 (4.1.2) The built-in potential is determined by N a and N d through Eq. (4.1.2). The larger the N a or N d is, the larger the φbi is.Typically, φbi is about 0.9 V for a silicon PN junction. Since a lower E c means a higher voltage (see Section 2.4), the N side is at a higher voltage or electrical potential than the P side.

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