Transcription of MOS Capacitor - Chenming Hu
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1575 MOS CapacitorCHAPTER OBJECTIVESThis chapter builds a deep understanding of the modern MOS(metal oxide semiconductor) structures. The key topics are the concepts of surfacedepletion, threshold, and inversion; MOS Capacitor C V; gate depletion; inversion-layerthickness; and two imaging devices charge-coupled device and CMOS(complementary MOS) imager. This chapter builds the foundation for understanding theMOSFETs (MOS Field-Effect Transistors).he acronym MOS stands for metal oxide semiconductor. An MOS Capacitor (Fig. 5 1) is made of a semiconductor body or substrate, an insulator film, suchas SiO2, and a metal electrode called a gate. The oxide film can be as thin nm. One nanometer is equal to 10 , or the size of a few oxide 1970, the gate was typically made of metals such as Al (hence the M inMOS). After 1970, heavily doped polycrystalline silicon (see the sidebar, Three Kindsof Solid, in section ) has been the standard gate material because of its ability toFIGURE 5 1 The MOS Page 157 Friday, February 13, 2009 2:38 PM158 Chapter 5 MOS Capacitorwithstand high temperature without reacting with SiO2.
1.5 nm. One nanometer is equal to 10 Å, or the size of a few oxide molecules. Before 1970, the gate was typically made of metals such as Al (hence the M in MOS). After 1970, heavily doped polycrystalline silicon (see the sidebar, Three Kinds of Solid, in Section 3.7) has been the standard gate material because of its ability to
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