SS8050 NPN Epitaxial Silicon Transistor - e-ele.net

©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 SS8050 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted

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TDA7377 - e-ele.net

DESCRIPTION The TDA7377 is a new technology class AB car radio amplifier able to work either in DUAL BRIDGEor QUADSINGLEENDED configuration. The exclusive fully complementarystructureof the

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Ω) CLASS-T™ DIGITAL AUDIO AMPLIFIER DRIVER …

Tripath Technology, Inc. - Technical Information 1 TA2020 – KL/7.1/03.05 TA2020-020 STEREO 20W (4Ω) CLASS-T™ DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY

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NJM4580 - e-ele.net

NJM4580 - 2 - Ver.2003-03-13 絶対最大定格絶対最大定格絶対最大定格 (Ta=25 ˚C) ID 項 目 記 号 条 件 最 小 標 準 最 大 単 位

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SS8550 PNP Epitaxial Silicon Transistor - e-ele.net

©2002 Fairchild Semiconductor Corporation SS8550 Rev. A2, November 2002 Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain

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UM3561 UM3561A Three Siren Sound Generator - …

1 UM3561 UM3561A Three Siren Sound Generator _____ Features • Four sounds can be selected • Power on reset.

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Silicon Transistor 2SA733 - e-ele.net

pnpエピタキシアル形シリコン・トランジスタ 低周波増幅用 本文欄外の 印は，本版で改訂された主な箇所を示しています。 ...

Silicon Transistor 2SC945 - e-ele.net

2 2sc945 データ・シート d17117jj2v0ds 特性曲線（ta = 25℃） 0.7 －25℃ total power dissipation vs. ambient temperature collector current vs.

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LM3886 - e-ele.net

3 www.national.com/jpn/ LM3886 絶対最大定格(Note 5、6) 本データシートには軍用・航空宇宙用の規格は記載されていません。 関連 ...

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LM2940/LM2940C 1A Low Dropout Regulator - e …

3 www.national.com/jpn/ LM2940/LM2940C 絶対最大定格(Note 1) 本データシートには軍用・航空宇宙用の規格は記載されていません。 関連 ...

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360μΩ, 5 V/60 A N-Channel MOSFET - Vicor Corporation

360μΩ, 5 V/60 A N-Channel MOSFET μRDS(on) FET™ Series PI5101-01-LGIZ Product Description The PI5101μRDS(on) FET™ solution combines a high-performance 5 V, 360 μΩ lateral N-Channel MOSFET with a thermally enhanced high density 4.1mm x 8mm x …

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FDMS86101 N-Channel PowerTrench® MOSFET

April 2016 ©2013 Fairchild Semiconductor Corporation FDMS86101 Rev.1.3 1 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench ® MOSFET FDMS86101 N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features

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ZVN2106A N-channel enhancement mode vertical DMOS …

n-channel enhancement mode vertical dmos fet issue 2 – march 94 features * 60 volt v ds *r ds(on) =2Ω absolute maximum ratings. parameter symbol value unit

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60V N-Channel MOSFET

AO6420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 0 2 4 6 8 10 0 2 4 6 8 10 V GS (Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600

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60V N-Channel MOSFET

AON6260 60V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 85A R DS(ON) (at V GS =10V) < 2.4m Ω R DS(ON) (at V GS =4.5V) < 3.5m Ω 100% UIS Tested 100% R g Tested Symbol Drain-Source Voltage VDS 60 The AON6260 uses trench MOSFET technology that is

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Silicon N-Channel Power MOSFET CS4N90 A4HD

CS4N90 A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ... 60 90 120. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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N-channel 60 V - 0.022 - 35 A DPAK/IPAK STripFET Power …

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tran-sistor shows extremely high packing density for ... N-channel 60 V - 0.022 - 35 A DPAK/IPAK STripFET Power MOSFET Author: STMICROELECTRONICS Subject -

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N-Channel 60-V (D-S) MOSFET - Farnell element14

Vishay Siliconix Si7370DP Document Number: 71874 S09-0270-Rev. F, 16-Feb-09 www.vishay.com 1 N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available † TrenchFET® Power MOSFET † New Low Thermal Resistance PowerPAK®

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N-Channel Power MOSFET 600 V, 2.0 OHMs - mantech.co.za

N-Channel Power MOSFET 600 V, 2.0 ... MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 4.0 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the

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FDD8424H Dual N & P-Channel PowerTrench MOSFET

FDD8424H Dual N & P-Channel PowerTrench ® MOSFET ©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDD8424H Rev.1.5 Notes: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θJC is guaranteed by design while RθCA is determined by the user's board design.

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