Transcription of SS8050 NPN Epitaxial Silicon Transistor - e-ele.net
{{id}} {{{paragraph}}}
Example: air traffic controller
SS8050 NPN Epitaxial Silicon Transistor - e-ele.net
SS8050 . SS8050 . 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550. Collector Current: IC= Collector Power Dissipation: PC=2W (TC=25 C). 1 TO-92. 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V. VCEO Collector-Emitter Voltage 25 V. VEBO Emitter-Base Voltage 6 V. IC Collector Current A. PC Collector Power Dissipation 1 W. TJ Junction Temperature 150 C. TSTG Storage Temperature -65 ~ 150 C. Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100 A, IE=0 40 V.
©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 SS8050 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: