Transcription of BD135/137/139 NPN Epitaxial Silicon Transistor
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BD135/137/139 NPN Epitaxial Silicon Transistor
2000 Fairchild Semiconductor InternationalRev. A, February 2000BD135/137/1391TO-126 NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25 C unless otherwise notedElectrical Characteristics TC=25 C unless otherwise notedhFE ClassificationSymbolParameterValueUnits VCBO Collector-Base Voltage : BD135 : BD137 : BD139 45 60 80 VVV VCEO Collector-Emitter Voltage : BD135 : BD137 : BD139 45 60 80 VVV VEBO Emitter-Base Voltage 5V IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25 C) PC Collector Dissipation (Ta=25 C) TJ Junction Temperature 150 C TSTG Storage Temperature- 55 ~ 150 CSymbolParameterTest VCEO(sus) Collector-Emitter Sustaining Voltage: BD135: BD137: BD139IC = 30mA, IB = 0 456080 VVV ICBO Collector Cut-off CurrentVCB = 30V, IE = A IEBO Emitter Cut-off CurrentVEB = 5V, IC = 0 10 A hFE1 hFE2 hFE3 DC Current Gain : ALL DEVICE: ALL DEVICE: BD135: BD137, BD139 VCE = 2V, IC = 5mAVCE = 2V, IC = = 2V, IC = 150mA25254040250160 VCE(sat) Collector-Emitter Saturation VoltageIC = 500mA, IB = VBE(on) Base-Emitter ON VoltageVCE = 2V, IC = 1 VClassification61016hFE340 ~ 10063 ~ 160100 ~ 250BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectiv
©2000 Fairchild Semiconductor International Rev. A, February 2000 BD135/137/139 1 TO-126 NPN Epitaxial Silicon Transistor Absolute …
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