Transcription of avalanche performance. - redrok.com
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avalanche performance. - redrok.com
@ TC = 25 CContinuous Drain Current, VGS @ 10V169 ID @ TC = 100 CContinuous Drain Current, VGS @ 10V118 AIDMP ulsed Drain Current2 680PD @TC = 25 CPower Dissipation330 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse avalanche Energy 560mJIARA valanche CurrentSee , 12b, 15, 16 AEARR epetitive avalanche Energy mJdv/dtPeak Diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting Torque, 6-32 or M3 screw10 lbf in ( m)HEXFET Power MOSFETS pecifically designed for Automotive applications, thisStripe Planar design of HEXFET Power MOSFET sutilizes the latest processing techniques to achieveextremely low on-resistance per silicon area.
4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
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