Transcription of BC237/238/239 NPN Epitaxial Silicon Transistor
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BC237/238/239 NPN Epitaxial Silicon Transistor
BC237/238/239 . BC237/238/239 . Switching and Amplifier Applications Low Noise: BC239. 1 TO-92. NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC237 50 V. : BC238/239 30 V. VCEO Collector-Emitter Voltage : BC237 45 V. : BC238/239 25 V. VEBO Emitter-Base Voltage : BC237 6 V. : BC238/239 5 V. IC Collector Current (DC) 100 mA. PC Collector Dissipation 500 mW. TJ Junction Temperature 150 C. TSTG Storage Temperature -55 ~ 150 C. Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0. : BC237 45 V. : BC238/239 25 V. BVEBO Emitter Base Breakdown Voltage IE=1 A, IC=0. : BC237 6 V. : BC238/239 5 V. ICES Collector Cut-off Current : BC237 VCE=50V, VBE=0 15 nA. : BC238/239 VCE=30V, VBE=0 15 nA.
©2000 Fairchild Semiconductor International Rev. B, January 2001 BC237/238/239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings …
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