Transcription of N-Channel Reduced Qg, Fast Switching MOSFET
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N-Channel Reduced Qg, Fast Switching MOSFET
vishay SiliconixSi4850 EYDocument Number: 71146S09-1341-Rev. F, Reduced Qg, fast Switching MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET power mosfets 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A) at VGS = 10 V at VGS = V SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) DGSN- channel MOSFETN otes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol 10 sSteady State Unit Drain-Source Voltage VDS60 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175 C)aTA = 25 = 70 Drain Current IDM40 Avalanche CurrentIAS15 Single Pulse Avalanche EnergyEAS11mJMaximum power DissipationaTA = 25 = 70 Junction and Storage Temperature Range TJ, Tstg- 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit
Vishay Siliconix Si4850EY Document Number: 71146 S09-1341-Rev. F, 13-Jul-09 www.vishay.com 1 N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition † TrenchFET® Power MOSFETs † 175 °C Maximum Junction Temperature
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