Transcription of NTE2987 Logic Level MOSFET N Channel, Enhancement Mode ...
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NTE2987 Logic Level MOSFET N Channel, Enhancement Mode ...
GSDNTE2987 Logic Level MOSFETN Channel, Enhancement ModeHigh speed SwitchTO220 Type PackageFeatures:DAvalanche Rugged TechnologyDLogic Level Gate DriveDRDS(on) = Typ. at VGS = 5VD+175 C Operating TemperatureDFast SwitchingDLow Gate ChargeDHigh Current CapabilityAbsolute Maximum Ratings:Drain Current, IDContinuousTC = +25 = +100 (Note 1) Power Dissipation (TC = +25 C), Above 25 Source Voltage, VGS Current, Repetitive or Non Repetitive (Note 2), Pulsed Avalanche Energy (Note 3), Avalanche Energy (Note 2), Current, Repetitive or Non Repetitive (Note 4), Source Voltage (VGS = 0), Gate Voltage (RGS = 20k ), Junction Temperature, TJ+175 Temperature Range, Tstg 65 to +175 Lead Temperature (During Soldering, from case, 10sec), TL+300 Resistance:Maximum Junction to Case, Case to Sink (Mounting surface flat, smooth, and greased), Junction to Ambient (Free Air Operation), 1.
G S D NTE2987 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: Avalanche Rugged Technology Logic Level Gate Drive RDS(on) = 0.09 Typ. at VGS = 5V +175 C Operating Temperature
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