Transcription of Optimizing MOSFET Characteristics by Adjusting Gate Drive ...
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1 IntroductionApplicationReportSLUA341 , , ,driverICsandPWMcontrollers, ,resultsinalowerassociatedon-resistance, RDS(on), ,loweringtheMOSFETon-resistanceisespecia llycriticalforthesynchronousrectifier, ,however, , ,ahighergatechargerequirementwillproduce longerriseandfalltimes, ,theappliedvoltageshoulddrivetheMOSFET gatessuchthattheaddedgatechargeandswitch inglossesarelessthanthepowersavingsgaine dbyloweringRDS(on).Forexample, DutyCycleFSW SwitchingFrequencyG1 ControlMOSFETGateDriveG2 SynchronousRectifierMOSFETGateDriveIG(si nk) DriverSinkCurrentIG(source) DriverSourceCurrentIOUT OutputLoadCurrentLLUMP DrivertoMOSFETP arasiticInductancePBD SynchronousRectifierMOSFETBody-DiodePowe rLossPC MOSFETC onductionPowerLossPD TotalDissipatedPower(G1,Q1,G2,Q2)POUT MOSFETO utputCapacitanceLossPRR SynchronousRectifierMOSFETBody-DiodeReve rseRecoveryPowerLossPSW mosfets witchingLossQG To
www .ti.com 2 Definition of Symbols and Abbreviations Definition of Symbols and Abbreviations The following list of symbols and abbreviations are used throughout the application example of this article.
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