Transcription of PD - 91309C IRF3710 - Mouser Electronics
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PD - 91309C IRF3710 - Mouser Electronics
PD - 91309C . IRF3710 . HEXFET Power MOSFET. l Advanced Process Technology D. l Ultra Low On-Resistance VDSS = 100V. l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m . l Fast Switching G. l Fully Avalanche Rated ID = 57A. S. Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode.
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