PD - 91309C IRF3710 - Mouser Electronics

1 PD - 91309C . IRF3710 . HEXFET Power MOSFET. l Advanced Process Technology D. l Ultra Low On-Resistance VDSS = 100V. l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m . l Fast Switching G. l Fully Avalanche Rated ID = 57A. S. Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

2 The low thermal resistance and low package cost of the TO-220 contribute to its wide TO-220AB. acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 57. ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 40 A. IDM Pulsed Drain Current 230. PD @TC = 25 C Power Dissipation 200 W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 20 V. IAR Avalanche Current 28 A. EAR Repetitive Avalanche Energy 20 mJ. dv/dt Peak Diode Recovery dv/dt V/ns TJ Operating Junction and -55 to + 175. TSTG Storage Temperature Range C. Soldering Temperature, for 10 seconds 300 ( from case ). Mounting torque, 6-32 or M3 srew 10 lbf in ( m).

3 Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case R CS Case-to-Sink, Flat, Greased Surface C/W. R JA Junction-to-Ambient 62. 1. 09/15/09. IRF3710 . Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250 A. V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, ID = 1mA. RDS(on) Static Drain-to-Source On-Resistance 23 m VGS = 10V, ID =28A . VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 250 A. gfs Forward Transconductance 32 S VDS = 25V, ID = 28A . 25 VDS = 100V, VGS = 0V. IDSS Drain-to-Source Leakage Current A.

4 250 VDS = 80V, VGS = 0V, TJ = 150 C. Gate-to-Source Forward Leakage 100 VGS = 20V. IGSS nA. Gate-to-Source Reverse Leakage -100 VGS = -20V. Qg Total Gate Charge 130 ID = 28A. Qgs Gate-to-Source Charge 26 nC VDS = 80V. Qgd Gate-to-Drain ("Miller") Charge 43 VGS = 10V, See Fig. 6 and 13. td(on) Turn-On Delay Time 12 VDD = 50V. tr Rise Time 58 ID = 28A. ns td(off) Turn-Off Delay Time 45 RG = . tf Fall Time 47 VGS = 10V, See Fig. 10 . Between lead, D. LD Internal Drain Inductance . 6mm ( ). nH. from package G. LS Internal Source Inductance . and center of die contact S. Ciss Input Capacitance 3130 VGS = 0V. Coss Output Capacitance 410 VDS = 25V. Crss Reverse Transfer Capacitance 72 pF = , See Fig.

5 5. EAS Single Pulse Avalanche Energy 1060 280 mJ IAS = 28A, L = Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol D. 57. (Body Diode) showing the A. ISM Pulsed Source Current integral reverse G. 230. (Body Diode) p-n junction diode. S. VSD Diode Forward Voltage V TJ = 25 C, IS = 28A, VGS = 0V . trr Reverse Recovery Time 140 220 ns TJ = 25 C, IF = 28A. Qrr Reverse Recovery Charge 670 1010 nC di/dt = 100A/ s . ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD). Notes: Repetitive rating; pulse width limited by ISD 28A, di/dt 380A/ s, VDD V(BR)DSS, max. junction temperature.

6 (See fig. 11) TJ 175 C. Starting TJ = 25 C, L = Pulse width 400 s; duty cycle 2%. RG = 25 , IAS = 28A, VGS=10V (See Figure 12) This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175 C . 2 IRF3710 . 1000 1000. VGS VGS. TOP 16V TOP 16V. 10V 10V. ID, Drain-to-Source Current (A). ID, Drain-to-Source Current (A). 100 100 BOTTOM BOTTOM 10 10. 1 1. 20 s PULSE WIDTH 20 s PULSE WIDTH. Tj = 25 C Tj = 175 C. 1 10 100 1 10 100. VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V). Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 57A. ID, Drain-to-Source Current ( ).

7 R DS(on) , Drain-to-Source On Resistance T J = 175 C (Normalized). T J = 25 C VDS = 15V. 50V. 20 s PULSE WIDTH V GS = 10V. -60 -40 -20 0 20 40 60 80 100 120 140 160 180. TJ , Junction Temperature ( C). VGS, Gate-to-Source Voltage (V). Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3. IRF3710 . 100000 VGS = 0V, f = 1 MHZ ID= 28A. Ciss = Cgs + Cgd, Cds SHORTED. Crss = Cgd VGS, Gate-to-Source Voltage (V). VDS= 80V. 10000 Coss = Cds + Cgd VDS= 50V. VDS= 20V. C, Capacitance(pF). Ciss 1000 Coss 100 Crss 10 1 10 100 0 20 40 60 80 100. VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC). Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

8 Drain-to-Source Voltage Gate-to-Source Voltage 1000. OPERATION IN THIS AREA. LIMITED BY R DS(on). ID, Drain-to-Source Current (A). ISD, Reverse Drain Current (A). 100. TJ = 175 C. 100 sec 10. 1msec T J = 25 C. 1 10msec Tc = 25 C. VGS = 0V Tj = 175 C. Single Pulse 1 10 100 1000. VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V). Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 IRF3710 . 60. RD. VDS. 50 VGS. RG. +. 40 -VDD. I D , Drain Current (A). V GS. 30. Pulse Width 1 s Duty Factor %. 20. Fig 10a. Switching Time Test Circuit 10 VDS. 90%. 0. 25 50 75 100 125 150 175. TC , Case Temperature ( C). 10%. VGS. Fig 9. Maximum Drain Current Vs.

9 Td(on) tr t d(off) tf Case Temperature Fig 10b. Switching Time Waveforms 1. D = (Z thJC). Thermal Response P DM. SINGLE PULSE t1. (THERMAL RESPONSE). t2. Notes: 1. Duty factor D = t1/ t 2. 2. Peak T J = P DM x Z thJC +TC. 1. t 1, Rectangular Pulse Duration (sec). Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5. IRF3710 . 550. 15V ID. TOP 11A. 20A. 440 BOTTOM 28A. L DRIVER. VDS. EAS , Single Pulse Avalanche Energy (mJ). RG + 330. V. - DD. IAS A. 20V. VGS. tp . 220. Fig 12a. Unclamped Inductive Test Circuit 110. V(BR)DSS. tp 0. 25 50 75 100 125 150 175. Starting T , Junction J Temperature ( C). Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS.

10 Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as 50K . 12V .2 F. QG .3 F. VGS +. V. - DS. QGS QGD. VGS. VG 3mA. IG ID. Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 IRF3710 . Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance Ground Plane . Low Leakage Inductance Current Transformer - +.. - +. - . RG dv/dt controlled by RG +. ISD controlled by Duty Factor "D" VDD. - - Device Under Test VGS. * Reverse Polarity of for P-Channel Driver Gate Drive Period D=. Period [VGS=10V ] **. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt VDS Waveform Diode Recovery dv/dt [VDD].