Transcription of PD - 95810 IRFP1405 - Infineon Technologies
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PD - 95810 IRFP1405 - Infineon Technologies
HEXFET Power MOSFETVDSS = 55 VRDS(on) = ID = MOSFETPD - 95810 Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques toachieve extremely low on-resistance per silicon area. Additionalfeatures of this design are a 175 C junction operating tempera-ture, fast switching speed and improved repetitive avalancherating . These features combine to make this design an extremelyefficient and reliable device for use in Automotive applications anda wide variety of other Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxFeaturesHEXFET is a registered trademark of International Rectifier.
www.irf.com 3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
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