Transcription of PE29102 - psemi.com
{{id}} {{{paragraph}}}
PE29102 Document Category: Product SpecificationUltraCMOS High-speed FET Driver, 40 MHz 2017, pSemi Corporation. All rights reserved. Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product SpecificationDOC-81227-6 (08/2018) High- and low-side FET drivers Dead-time control Fast propagation delay, 9 ns Tri-state enable mode Sub-nanosecond rise and fall time 2A/4A peak source/sink current Package flip chipApplications Class D audio DC DC / AC DC converters Wireless charging Envelope tracking LiDAR Product DescriptionThe PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs.
PE29102 High-speed FET Driver Page 2 DOC-81227-4 – (10/2017) www.psemi.com Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage.
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document:
{{id}} {{{paragraph}}}
A comprehensive methodology to qualify the, A comprehensive methodology to qualify the reliability of GaN, GaN Reliability, Devices, To establish Millitech as the leader, Elisra, GaN Half-Bridge Power Stage, Product, Trench MOSFET Combining SiC, Trench MOSFET Combining SiC Performance With Silicon Ruggedness, Meeting Biasing Requirements of Externally Biased, IN-S63AT series