Power MOSFET Basics

Source Gate Power MOSFET Basics N+. P-body Table of Contents N- Epi 1. Basic Device Structure 2. Breakdown Voltage 3. On-State Characteristics N+ Substrate 4. Capacitance 5. Gate Charge Drain 6. Gate Resistance 7. Turn-on and Turn-off Figure 1b: Planar MOSFET Structure 8. Body Diode Forward Voltage 9. Body Diode Reverse Recovery 2. Breakdown Voltage 10. Avalanche capability and ratings 11. dV/dt ratings In most Power MOSFETs the N+ source and P-body junction 12. Thermal Resistance Characterization are shorted through source metallization to avoid accidental 13. Power Dissipation turn-on of the parasitic bipolar transistor. When no bias is 14. Safe-Operating Area applied to the Gate, the Power MOSFET is capable of 15.

and drain. For power MOSFETs, it is usually measured at the drain-source current of 250uA. Gate oxide thickness and doping concentration of the channel can be used to control the V . Typically, 2~4V is designed for gate drive of 10-15V. With the scaling down of the CMOS technology, the gate drive of the power MOSFET drops to 2.5-4.5V. Therefore,

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