Transcription of Power MOSFET Basics
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Power MOSFET Basics
Source Gate Power MOSFET Basics N+. P-body Table of Contents N- Epi 1. Basic Device Structure 2. Breakdown Voltage 3. On-State characteristics N+ Substrate 4. Capacitance 5. Gate Charge Drain 6. Gate Resistance 7. Turn-on and Turn-off Figure 1b: Planar MOSFET Structure 8. Body Diode Forward Voltage 9. Body Diode Reverse Recovery 2. Breakdown Voltage 10. Avalanche capability and ratings 11. dV/dt ratings In most Power MOSFETs the N+ source and P-body junction 12. Thermal Resistance Characterization are shorted through source metallization to avoid accidental 13. Power Dissipation turn-on of the parasitic bipolar transistor. When no bias is 14. Safe-Operating Area applied to the Gate, the Power MOSFET is capable of 15. Current Ratings supporting a high Drain voltage through the reverse-biased P- body and N- Epi junction. In high voltage devices, most of the 1.
mobility. This is an important characteristic for device paralleling. c limited by the other resistance components. RDSON increas Rs Rch Racc Repi Rsubs Figure 4: RDSON vs. gate bias and temperature Threshold Voltage Threshold voltage, V, is defined as the minimum gate bias which can form a conducting channel between the source and drain.
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