Power MOSFET - Vishay

Document Number: A, 16-Jun-081 Power MOSFETIRFP450A, SiHFP450 AVishay SiliconixFEATURES Low Gate Charge Qg Results in Simple DriveRequirement Improved Gate, Avalanche and Dynamic dV/dtRuggedness Fully Characterized Capacitance andAvalanche Voltage and Current Effective Coss Specified Lead (Pb)-free AvailableAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power SwitchingTYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge, Full Bridge PFC BoostNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Starting TJ = 25 C, L = mH, RG = 25 , IAS = 14 A (see fig. 12).c. ISD 14 A, dI/dt 130 A/ s, VDD VDS, TJ 150 mm from SUMMARYVDS (V)500 RDS(on) ( )VGS = 10 V (Max.) (nC)64 Qgs (nC)16 Qgd (nC)26 ConfigurationSingleN-Channel MOSFET GDSTO-247 GDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-247 Lead (Pb)-freeIRFP450 APbFSiHFP450A-E3 SnPbIRFP450 ASiHFP450 AABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedPARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS500V Gate-Source VoltageVGS 30 Continuous Drain CurrentVGS at 10 VTC = 25 C ID14 ATC = 100 C Drain CurrentaIDM 56

Document Number: 91230 www.vishay.com S-81271-Rev. A, 16-Jun-08 1 Power MOSFET IRFP450A, SiHFP450A Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement

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