Transcription of Power MOSFET - Vishay
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Document Number: 91065 B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRF840A, SiHF840 AVishay Siliconix FEATURES Low Gate Charge Qg Results in Simple DriveRequirement Improved Gate, Avalanche and Dynamic dV/dtRuggedness Fully Characterized Capacitance and Avalanche Voltageand Current Effective Coss Specified Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power SwitchingTYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge Full BridgeNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 50 V, starting TJ = 25 C, L = 16 mH, Rg = 25 , IAS = A (see fig. 12).c.
www.vishay.com Document Number: 91065 2 S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HERE IN AND THIS ...
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Switch, Power Switch, Power Switch Power, Power, Mode, Advancing power supply solutions through the promise, Texas Instruments, SMPS, History of FET technology and the move, NCP4304 - Secondary Side Synchronous Rectification Driver, Supply, Power MOSFET, Technical Comparison of On-line, Novel Design of LLC Resonant