Power MOSFET - Vishay

1 Document Number: 91065 B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRF840A, SiHF840 AVishay Siliconix FEATURES Low Gate Charge Qg Results in Simple DriveRequirement Improved Gate, Avalanche and Dynamic dV/dtRuggedness Fully Characterized Capacitance and Avalanche Voltageand Current Effective Coss Specified Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power SwitchingTYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge Full BridgeNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 50 V, starting TJ = 25 C, L = 16 mH, Rg = 25 , IAS = A (see fig. 12).c.

2 ISD A, dI/dt 100 A/ s, VDD VDS, TJ 150 mm from SUMMARYVDS (V)500 RDS(on) ( )VGS = 10 V (Max.) (nC)38 Qgs (nC) (nC)18 ConfigurationSingleN-Channel MOSFET GDSTO-220 ABGDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-220 ABLead (Pb)-freeIRF840 APbFSiHF840A-E3 SnPbIRF840 ASiHF840A ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS500V Gate-Source VoltageVGS 30 Continuous Drain CurrentVGS at 10 VTC = 25 C = 100 C Drain CurrentaIDM 32 Linear Derating C Single Pulse Avalanche EnergybEAS 510mJ Repetitive Avalanche CurrentaIAR Repetitive Avalanche EnergyaEAR13mJ Maximum Power DissipationTC = 25 C PD125W Peak Diode Recovery dV/dtcdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150 C Soldering Recommendations (Peak Temperature)

3 For 10 s300dMounting Torque6-32 or M3 screw10 lbf m* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 910652S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF840 AVishay Siliconix Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-62 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 500--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 30 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V --25 A VDS = 400 V, VGS = 0 V, TJ = 125 C --250 Drain-Source On-State Resistance RDS(on)

4 VGS = 10 VID = Forward Transconductance gfs VDS = 50 V, ID = DynamicInput Capacitance Ciss VGS = 0 V,VDS = 25 V,f = MHz, see fig. 5 -1018-pFOutput Capacitance Coss -155-Reverse Transfer Capacitance Crss Capacitance Coss VGS = 0 V; VDS = V, f = MHz1490 Output Capacitance Coss VGS = 0 V; VDS = 400 V, f = MHz42 Effective Output Capacitance Coss = 0 V; VDS = 0 V to 400 Vc56 Total Gate Charge Qg VGS = 10 V ID = 8 A, VDS = 400 V,see fig. 6 and 13b--38nC Gate-Source Charge Qgs ChargeQgd --18 Turn-On Delay Time td(on) VDD = 250 V, ID = 8 A Rg = , RD = 31 , see fig. 10b-11-nsRise Timetr -23-Turn-Off Delay Time td(off) -26-Fall Time tf -19-Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction Diode Forward CurrentaISM--32 Body Diode VoltageVSDTJ = 25 C, IS = 8 A, VGS = 0 Diode Reverse Recovery TimetrrTJ = 25 C, IF = 8 A, dI/dt = 100 A/ sb-422633nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)SDG Document Number.

5 91065 B, 21-Mar-113 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF840A Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Fig. 1 - Typical Output Characteristics, TC = 25 CFig. 2 - Typical Output Characteristics, TC = 150 CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperature10210191065_01 BottomTo pVGS15 V10 V20 s Pulse WidthTC = 25 VVDS, Drain-to-Source Voltage (V)ID, Drain-to-Source Current (A) pVGS15 V10 V20 s Pulse WidthTC = 150 VVDS, Drain-to-Source Voltage (V)ID, Drain-to-Source Current (A) = 25 C20 s Pulse WidthVDS = 50 VID, Drain-to-Source Current (A)VGS, Gate-to-Source Voltage (V) = 150 C91065_04ID = AVGS = 10 60 - 40 - 20 0 2040 6080 100 120 140 160TJ, Junction Temperature ( C)RDS(on), Drain-to-Source On Resistance(Normalized) Document Number: 910654S11-0506-Rev.

6 B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF840 AVishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating Area1110210310291065_05 Capacitance (pF)VDS, Drain-to-Source Voltage (V)CissCrssCossVGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds ShortedCrss = CgdCoss = Cds + Cgd101010510410391065_06QG, Total Gate Charge (nC)VGS, Gate-to-Source Voltage (V)201612804010403020ID = AVDS = 100 VVDS = 250 VFor test circuitsee figure 13 VDS = 400 V91065_07 VGS = 0 VVSD, Source-to-Drain Voltage (V)ISD, Reverse Drain Current (A) = 25 CTJ = 150 C10291065_0810 s100 s1 ms10 msOperation in this area limitedby RDS(on)TC = 25 CTJ = 150 CSingle PulseVDS, Drain-to-Source Voltage (V)ID, Drain Current (A) Document Number: 91065 B, 21-Mar-115 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF840A Vishay Siliconix Fig.

7 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case91065_09ID, Drain Current (A)TC, Case Temperature ( C) width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off) Response (ZthJC)t1, Rectangular Pulse Duration (s) = :1. Duty Factor, D = t1/t22. Peak Tj = PDM x ZthJC + TCSingle Pulse(Thermal Response)10-5 Document Number: 910656S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF840 AVishay Siliconix Fig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 12d - Basic Gate Charge WaveformFig. 13a - Typical Drain-to-Source Voltage CurrentFig. 13b - Gate Charge Test +-VDD10 VVar y tp to obtainrequired IASIASVDSVDDVDStp91065_12c10000200400600 800251501251007550 Starting TJ, Junction Temperature ( C)EAS, Single Pulse Avalanche Energy (mJ)1200 BottomTo AQGSQGDQGVGC harge10 , Avalanche Current (A)VDSav, Avalanche Voltage (V) F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +- Document Number: 91065 B, 21-Mar-117 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF840A Vishay Siliconix Fig.

8 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 Va ISDD river gate lSD VDS waveformInductor currentD = +-+++---Peak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by Rg Driver same type as ISD controlled by duty factor D - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRgNotea. VGS = 5 V for logic level devicesVDDP ackage Siliconix Revison: 14-Dec-151 Document Number: 66542 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT M* = inches to inches (dimension includingprotrusion), heatsink hole for HVMM*321LL(1)DH(1)Q PAFJ(1)b(1)e(1) (1) (1) (1) (1) (1) : X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Package PictureASEXi anLegal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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