Transcription of Power MOSFET - vishay.com
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Power MOSFET - vishay.com
IRF530, SiHF530. vishay Siliconix Power MOSFET . FEATURES. PRODUCT SUMMARY. Dynamic dV/dt Rating VDS (V) 100. Repetitive Avalanche Rated Available RDS(on) ( ) VGS = 10 V 175 C Operating Temperature RoHS*. Qg (Max.) (nC) 26 COMPLIANT. Fast Switching Qgs (nC) Qgd (nC) 11. Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC. D. TO-220AB DESCRIPTION. Third generation Power MOSFETs from vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at Power dissipation D. G S levels to approximately 50 W. The low thermal resistance N-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
www.vishay.com Document Number: 91019 2 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HERE IN AND THIS ...
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