Transcription of Power MOSFET - Vishay Intertechnology
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Power MOSFET - Vishay Intertechnology
Document Number: B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRFP260, SiHFP260 Vishay SiliconixFEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power mosfets from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance TO-247AC package is preferred forcommercial-industrial applications where higher powerlevels preclude the use of TO-220AB devices. TheTO-247AC is similar but superior to the earlier TO-218package because of its isolated mouting hole. It alsoprovides greater creepage distance between pins to meetthe requirements of most safety Repetitive rating; pulse width limited by maximum junction temperature (see fig.)
d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω)VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single N-Channel MOSFET G D S TO-247AC G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFP260PbF SiHFP260-E3 SnPb IRFP260 SiHFP260 ABSOLUTE MAXIMUM …
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