Transcription of Power MOSFET Basics - aosmd.com
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Power MOSFET Basics - aosmd.com
Source Gate Power MOSFET Basics N+. P-body Table of Contents N- Epi 1. Basic Device Structure 2. Breakdown Voltage 3. On-State Characteristics N+ Substrate 4. Capacitance 5. Gate Charge Drain 6. Gate Resistance 7. Turn-on and Turn-off Figure 1b: Planar MOSFET Structure 8. Body Diode Forward Voltage 9. Body Diode Reverse Recovery 2. Breakdown Voltage 10. Avalanche capability and ratings 11. dV/dt ratings In most Power mosfets the N+ source and P-body junction 12. Thermal Resistance Characterization are shorted through source metallization to avoid accidental 13. Power Dissipation turn-on of the parasitic bipolar transistor. When no bias is 14.
The MOSFET’s switching behavior is affected by the parasitic capacitances between the device’s three terminals, that is, gate-to-source (CGS), gate-to-drain (CGD) and drain-to-source (CDS) capacitances as shown in Figure 6. These capacitances’ values are non-linear and a function of device structure, geometry, and bias voltages. N+ P-body ...
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