Transcription of RGS60TS65D : IGBT - Rohm
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Data 2016 ROHM Co., Ltd. All rights 650V 30A Field Stop Trench igbt *1 Pulse width limited by CircuitlOutlineVCES650V TO-247 NIC(100 C)30 AVCE(sat) (Typ.) ) Low Collector - Emitter Saturation Voltage2) Short Circuit Withstand Time 8 s3) Qualified to AEC-Q1014) Built in Very Fast & Soft Recovery FRD5) Pb - free Lead Plating ; RoHS CompliantlPackaging SpecificationsTypePackagingTubelApplicat ionsReel Size (mm)-General InverterTape Width (mm)- for Automotive and Industrial UseBasic Ordering Unit (pcs)450 Packing CodeC11 MarkingRGS60TS65 DlAbsolute Maximum Ratings (at TC = 25 C unless otherwise specified)ParameterSymbolValueUnitCollec tor - Emitter VoltageVCES650 VGate - Emitter VoltageVGES 30 VCollector CurrentTC = 25 CIC56 ATC = 100 CIC30 APulsed Collector CurrentICP*190 ADiode Forward CurrentTC = 25 CIF56 ATC = 100 CIF30 ADiode Pulsed Forward CurrentIFP
0 5 10 15 20 5 1015 20 t j = 25ºc i c = 60a i c = 15a i c = 30a 5 15 20 t j = 175ºc i c = 60a i c = 15a i 1 10 100 1000 0 10 20 3040 50 60 t f v cc =400v, v ge =15v r g =10Ω, t j
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IGBT Gate-Driver Power Supply Optimized, Gate, IGBT Gate Driver, IGBT Gate, Isolated Flyback Controller Preliminary Technical Data ADuM4138, Analog Devices, NCD5702 - High Current IGBT Gate Driver, Insulated Gate Bipolar Transistor, IGBT, AN3007 Using NEC Optocouplers as Gate Drivers, IGBT reverse conduction characteristics Hard