RGS60TS65D : IGBT - Rohm

1 Data 2016 ROHM Co., Ltd. All rights 650V 30A Field Stop Trench igbt *1 Pulse width limited by CircuitlOutlineVCES650V TO-247 NIC(100 C)30 AVCE(sat) (Typ.) ) Low Collector - Emitter Saturation Voltage2) Short Circuit Withstand Time 8 s3) Qualified to AEC-Q1014) Built in Very Fast & Soft Recovery FRD5) Pb - free Lead Plating ; RoHS CompliantlPackaging SpecificationsTypePackagingTubelApplicat ionsReel Size (mm)-General InverterTape Width (mm)- for Automotive and Industrial UseBasic Ordering Unit (pcs)450 Packing CodeC11 MarkingRGS60TS65 DlAbsolute Maximum Ratings (at TC = 25 C unless otherwise specified)

2 ParameterSymbolValueUnitCollector - Emitter VoltageVCES650 VGate - Emitter VoltageVGES 30 VCollector CurrentTC = 25 CIC56 ATC = 100 CIC30 APulsed Collector CurrentICP*190 ADiode Forward CurrentTC = 25 CIF56 ATC = 100 CIF30 ADiode Pulsed Forward CurrentIFP*190 APower DissipationTC = 25 CPD223 WTC = 100 CPD111 WOperating Junction TemperatureTj-40 to +175 CStorage TemperatureTstg-55 to +175 C(1) Gate (2) Collector (3) Emitter *1 *1 Built in FRD (1) (2) (3) (1) (2) (3) 1/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlThermal ResistancelIGBT Electrical Characteristics (at Tj = 25 C unless otherwise specified)VCE = 650V, VGE = C/WThermal Resistance Diode Junction - CaseR (j-c) Resistance igbt Junction - CaseR (j-c) C/W5 ParameterSymbolConditionsValues 200 VCollector Cut - off CurrentICES--Collector - Emitter BreakdownVoltageBVCESIC = 10 A, VGE = 0V650--Tj = 25 CTj = 175 C10 Gate - Emitter Leakage CurrentIGESVGE = 30V, VCE = 0V--Gate - Emitter ThresholdVoltageVGE(th)VCE = 5V, IC = - Emitter SaturationVoltageVCE(sat)

3 IC = 30A, VGE = 15V AmAVTj = 25 = 175 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlIGBT Electrical Characteristics (at Tj = 25 C unless otherwise specified)*2 Design assurance without CapacitanceCoesVGE = 0V-80-Reverse Transfer CapacitanceCresf = 1 MHzInput CapacitanceCiesVCE = 30V-980--13-Total Gate ChargeQgVCE = 300V-36-nCGate - Emitter ChargeQgeIC = 30A-10-Gate - Collector ChargeQgcVGE = 15V-15-Turn - on Delay Timetd(on)IC = 30A, VCC = 400V-28-nsRise TimetrVGE = 15V, RG = 10 -12-Turn - off Delay Timetd(off)Tj = 25 CIC = 30A, VCC = 400V-29--104-Fall TimetfInductive Load-101-Turn - on Switching LossEon*Eon includes Bias Safe Operating AreaRBSOAIC = 90A, VCC = 520 VFULL SQUARE-VP = 650V, VGE = 15 VRG = 50 , Tj = 175 C-131-Fall TimetfInductive Load-159-nsRise TimetrVGE = 15V, RG = 10 -17-Turn - off Delay TimemJTurn - off Switching LossEoffreverse - on Switching LossEon*Eon includes - off Switching LossEoffreverse (off)Tj = 175 CTurn - on Delay Timetd(on)

4 SVCC 360V sVGE = 15V, Tj = 150 CShort Circuit Withstand Timetsc*26--VCC 360 VVGE = 15V, Tj = 25 CShort Circuit Withstand Timetsc8--3/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlFRD Electrical Characteristics (at Tj = 25 C unless otherwise specified)VCC = 400 VdiF/dt = 200A/ sTj = 25 CVCC = 400 VdiF/dt = 200A/ sTj = 175 Forward VoltageVFIF = 30 AVTj = 25 = 175 Peak Reverse RecoveryCurrentIrrIF = Reverse Recovery Timetrr-103--trr-242-Diode Reverse Recovery EnergyErr-15- JDiode Peak Reverse RecoveryCurrentIrrIF = Reverse Recovery EnergyErr-113- C CDiode Reverse JDiode Reverse Recovery TimeDiode Reverse - 2016 ROHM Co.

5 , Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic Curves 0204060801001201401601802002202400255075 1001251501750204060801001200200400600800 Tj 175 C VGE=15V 01020304050600255075100125150175Tj 175 C VGE 15V s TC= 25 C Single Pulse 100 s Collector Current vs. Case Temperature Collector Current : IC [A] Case Temperature : TC [ C] Collector Current : IC [A] Collector To Emitter Voltage : VCE[V] Reverse Bias Safe Operating Area Collector Current : IC [A] Collector To Emitter Voltage : VCE[V] Power Dissipation vs. Case Temperature Power Dissipation : PD [W] Case Temperature : TC [ C] Forward Bias Safe Operating Area 5/11 - 2016 ROHM Co.

6 , Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic Curves0153045607590012345Tj= 175 C VGE= 20V VGE= 12V VGE= 10V VGE= 8V VGE= 15V 0153045607590012345Tj= 25 C VGE= 20V VGE= 15V VGE= 12V VGE= 10V VGE= 8V 010203040506002468101214 VCE= 10V Tj= 25 C Tj= 175 C 01234255075100125150175IC= 60A IC= 15A IC= 30A VGE= 15V Typical Output Characteristics Collector Current : IC [A] Collector To Emitter Voltage : VCE[V] Typical Output Characteristics Collector Current : IC [A] Collector To Emitter Voltage : VCE[V] Typical Transfer Characteristics Collector Current : IC [A] Gate To Emitter Voltage : VGE [V] Typical Collector To Emitter Saturation Voltage vs.

7 Junction Temperature Collector To Emitter Saturation Voltage : VCE(sat) [V] Junction Temperature : Tj [ C] 6/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic Curves051015205101520Tj= 25 C IC= 60A IC= 15A IC= 30A 051015205101520Tj= 175 C IC= 60A IC= 15A IC= 30A 11010010000102030405060tf VCC=400V, VGE=15V RG=10 , Tj=175 C Inductive oad td(off) td(on) tr 110100100001020304050tf td(off) td(on) tr VCC=400V, IC=30A VGE=15V, Tj=175 C Inductive oad Collector To Emitter Saturation Voltage : VCE(sat) [V] Gate To Emitter Voltage : VGE [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Gate To Emitter Voltage : VGE [V] Switching Time [ns] Collector Current.

8 IC [A] Typical Switching Time vs. Gate Resistance Switching Time [ns] Gate Resistance : RG [ ] Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Typical Switching Time vs. Collector Current 7/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic VCC=400V, VGE=15V RG=10 , Tj=175 C Inductive oad Eon f=1 MHz VGE=0V Tj=25 C Coes Cres Eon VCC=400V, IC=30A VGE=15V, Tj=175 C Inductive oad 051015010203040IC=30A Tj=25 C 200V 300V 400V Typical Switching Energy Losses vs.

9 Collector Current Switching Energy Losses [mJ] Collector Current : IC [A] Typical Switching Energy Losses vs. Gate Resistance Switching Energy Losses [mJ] Gate Resistance : RG [ ] Typical Capacitance vs. Collector To Emitter Voltage Capacitance [pF] Collector To Emitter Voltage : VCE[V] Typical Gate Charge Gate To Emitter Voltage : VGE [V] Gate Charge : Qg [nC] 8/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic 175 C Tj= 25 C 01002003004000102030405060 VCC=400V diF/dt=200A/ s Inductive oad Tj= 175 C Tj= 25 C 051015200102030405060Tj= 175 C Tj= 25 C VCC=400V diF/dt=200A/ s Inductive oad Tj= 175 C Inductive oad RG=10 RG=20 RG=50 Typical Diode Forward Current vs.

10 Forward Voltage Forward Current : IF [A] Forward Voltage : VF[V] Typical Diode Reverse Recovery Time vs. Forward Current Reverse Recovery Time : trr [ns] Forward Current : IF [A] Typical Diode Reverse Recovery Current vs. Forward Current Reverse Recovery Current : Irr [A] Forward Current : IF [A] Typical Diode Reverse Recovery Energy Losses vs. Forward Current Reverse Recovery Energy Losses : Err [mJ] Forward Current : IF [A] 9/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic Single Pulse Single Pulse igbt Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ C/W] Pulse Width : t1[s] Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ C/W] Pulse Width : t1[s] t1 t2 PDM Duty=t1/t2 Peak Tj=PDM ZthJC+TC t1 t2 PDM Duty=t1/t2 Peak Tj=PDM ZthJC+TC - 2016 ROHM Co.