Transcription of Schottky Barrier Diode - Rohm
{{id}} {{{paragraph}}}
Example: confidence
Schottky Barrier Diode - Rohm
Data 2016 ROHM Co., Ltd. All rights Barrier DiodeRB522ES-30lApplicationlDimensions (Unit : mm)lLand Size Figure (Unit : mm)General rectificationlFeatureslStructure1)Small silicon package(SMD0603)2)High AccuracyManufacturing Dimensiontolerance 10mm3)Low VFlConstructionlTaping Dimensions (Unit : mm)Silicon epitaxial planar typeROHM: SMD0603 SMD0603 Anode Cathode 1 - Absolure Maximum Ratings (Ta=25oC)SymbolVRMVRIOIFSMTjTstg Electrical Characteristics (Tj=25 C)SymbolUnitVFmVIR A370 Max7500mA150 C-40 +150 CParameterConditionsNon-repetitive Forward Current Surge PeakReverse CurrentIF=10mAVR=10V60Hz half sin wave, one cycle, non-repetitiveat Ta=25 COperating Junction Temperature-Forward VoltageStorage Temperature-Reverse VoltageDirect Reverse Voltage30 VAverage forward rectified currentGlass epoxy board mounted, 60Hz half sinwave, resistive load,100mARepetitive Peak Reverse VoltageDuty 2016 ROHM Co.
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability.
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: