Transcription of SiC MOSFET Benefits - STMicroelectronics
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SiC MOSFET Benefits - STMicroelectronics
SiC MOSFET Benefits Jeff Fedison Sr. Applications Engineer Agenda 2. SiC mosfets Overview of EV/HEV Power Electronics EV Traction Inverter Design Example Conclusion SiC MOSFET . A Real Revolution for high-voltage Power Switches Wide Bandgap Materials 4. Radical innovation for Power Electronics Si GaN 4H-SiC. Eg (eV) Band gap Vs (cm/s) Electron saturation velocity 1x107 2x107. r dielectric constant 10 Ec (V/cm) Critical electric field 3x105 k (W/cm K) thermal conductivity 5. Ec low on resistance Vs Higher switching frequency Lower switching losses Eg low leakage, high Tj k Operation > 200 C. Reduced Cooling Requirements Benefits of SiC mosfets 5. Key Benefits Extremely low Energy Losses and Ultra-Low RDS(on) especially at very high Tj Higher operating frequency for smaller and lighter systems Good Thermal Performance High operating temperature ( Tjmax = 200 C). Reduced cooling requirements & heat-sink, Increased lifetime Easy to Drive Fully compatible with standard Gate Drivers Very fast and robust intrinsic body diode More compact Inverter High-Voltage DMOSFET Structure 6.
SiC MOSFET 0.52 1.6 1.8 500 / 450* 350 / 400 +15% from 25°C to 150°C IGBT 1.00 1.95 2.2 800 / 1300** 800/ 1900 +140% from 25°C to 150°C * Including SiC intrinsic body diode Q rr ** Including the Si IGBT copack diode Q rr SiC die size compared to IGBT • Data measured on SiC MOSFET engineering samples; • SiC MOSFET device : SCT30N120 ...
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