Transcription of SiC Power Devices and Modues Application Note
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1/88 2017 ROHM Co., Ltd. No. 60AP001E 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Application Note Note: The evaluation data and other information described in this Application note are the results of evaluation by ROHM under identical conditions and presented as references. We do not guarantee the characteristics described herein. 2/88 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Contents 1. SiC semiconductor .. 5 Physical properties and features of SiC .. 5 Features as Power Devices .. 5 2. Features of SiC SBD .. 6 Device structure and features .. 6 Forward characteristics of SiC SBD.
power factor correction (PFC) circuits and secondary side rectifying bridges, and extending to onboard chargers for EV, power conditioners for solar power generation, power supplies for servers, air conditioners, and so on. Currently, SBD with breakdown voltages of 650 V, 1,200 V, and 1,700 V are listed in ROHM’s lineup. Figure 2-1.
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