Transcription of Snubber circuit design methods - Rohm
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Snubber circuit design methods - Rohm
1/6 2017 ROHM Co., Ltd. No. 60AP001E 2020 ROHM Co., Ltd. No. 62AN037E Application Note SiC MOSFET Snubber circuit design methods SiC MOSFET is getting more popular in applications where fast and efficient switching is required, such as power supply applications. On the other hand, the fast switching capability causes high dv/dt and di/dt, which couple with stray inductance of package and surrounding circuit , resulting in large surge voltage and/or current between drain and source terminals of the MOSFET.
is bulk capacitor placed in parallel with input HVdc-PGND. During the turn off of LS, surge voltage occurs in drain-source of LS by resonant phenomenon between L MAIN and parasitic capacitance of the MOSFET C OSS （ C DS + DG）. The maximum voltage V DS_SURGE is as shown in (1). Where V HVDC is the applied voltage on HVdc terminal and R OFF
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