Transcription of SiC Power Devices and Modues Application Note
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SiC Power Devices and Modues Application Note
1/88 2017 ROHM Co., Ltd. No. 60AP001E 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Application Note Note: The evaluation data and other information described in this Application note are the results of evaluation by ROHM under identical conditions and presented as references. We do not guarantee the characteristics described herein. 2/88 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Contents 1. SiC semiconductor .. 5 Physical properties and features of SiC.
breakdown voltage power devices from 600 V to several thousand V can be manufactured with a drift layer having a higher impurity concentration and a thinner thickness compared with Si devices. Most of the resistance component of high breakdown voltage power devices is the resistance of this drift layer.
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