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SiC Power Devices and Modues Application Note - Rohm

1/88 2017 ROHM Co., Ltd. No. 60AP001E 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Application Note Note: The evaluation data and other information described in this Application note are the results of evaluation by ROHM under identical conditions and presented as references. We do not guarantee the characteristics described herein. 2/88 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Contents 1. SiC semiconductor .. 5 Physical properties and features of SiC .. 5 Features as Power Devices .. 5 2. Features of SiC SBD .. 6 Device structure and features .. 6 Forward characteristics of SiC SBD .. 7 Recovery characteristics of SiC SBD .. 8 Forward surge characteristics of SiC SBD.

voltage power devices is the resistance of this drift layer. Therefore, SiC can realize high breakdown voltage devices with a very low on-resistance per unit area. Compared with Si, the drift layer resistance per area can theoretically be reduced to 1/300 at the same breakdown voltage.

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