Transcription of SRAM Nonvolatile Controller Unit - TI.com
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SRAM Nonvolatile Controller Unit - TI.com
Features Power monitoring and switchingfor 3-volt battery-backup applica-tions Write-protect control 3-volt primary cell inputs Less than 10ns chip-enablepropagation delay 5% or 10% supply operationGeneral DescriptionThe CMOS bq2201 SRAM NonvolatileController Unit provides all necessaryfunctions for converting a standardCMOS SRAM into nonvolatileread/write precision comparator monitors the5V VCCinput for an out-of-tolerancecondition. When out of tolerance isdetected, a conditioned chip-enableoutput is forced inactive to write-protect any standard CMOS a power failure, the externalSRAM is switched from the VCCsupply to one of two 3V backup sup-plies. On a subsequent power-up, theSRAM is write-protected until apower-valid condition bq2201 is footprint- and timing-compatible with industry stan-dardswith the added benefit of achip-enablepropagation delay ofless than Nonvolatile Controller Unitbq2201 Oct.
As the supply continues to fall past VPFD, an internal switching device forces VOUT to one of the two external backup energy sources. CECON is held high by the VOUT energy source. During power-up, VOUT is switched back to the VCC sup- ply as VCC rises above the backup cell input voltage sourcing VOUT.The CECON output is held inactive for time tCER (120 ms maximum) after the supply has
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