Transcription of Technical Data RF Power LDMOS Transistor
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Technical Data RF Power LDMOS Transistor
MRFE6VS25LR51RF Device DataFreescale Semiconductor, Power LDMOS TransistorHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETRF Power Transistor designed for both narrowband and broadband ISM,broadcast and aerospace applications operating at frequencies from to2000 MHz. This device is fabricated using Freescale s enhanced ruggednessplatform and is suitable for use in applications where high VSWRs Performance:VDD=50 VoltsFrequency(MHz)Signal TypePout(W)Gps(dB) D(%)IMD(dBc) (1,3)Two--Tone(10 kHz spacing)25 2 830--512(2,3)Two--Tone(200 kHz spacing)25 3 2512(4)Pulse(100 sec, 20%Duty Cycle)25 512(4) Load Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W)TestVoltageResult30(1)CW>6 5:1at all (3 dBOverdrive)50No DeviceDegradation512(2) (3 dBOverdrive)512(4)Pulse(100 sec, 20%Duty Cycle) Peak(3 dBOverdrive)512(4) (3 dBOverdrive)1.
MRFE6VS25LR5 1 RF Device Data Freescale Semiconductor, Inc. RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET RF power transistor designed for both narrowband and broadband ISM,
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