Technical Data RF Power LDMOS Transistor

1 MRFE6VS25LR51RF Device DataFreescale Semiconductor, Power LDMOS TransistorHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETRF Power Transistor designed for both narrowband and broadband ISM,broadcast and aerospace applications operating at frequencies from to2000 MHz. This device is fabricated using Freescale s enhanced ruggednessplatform and is suitable for use in applications where high VSWRs Performance:VDD=50 VoltsFrequency(MHz)Signal TypePout(W)Gps(dB) D(%)IMD(dBc) (1,3)Two--Tone(10 kHz spacing)25 2 830--512(2,3)Two--Tone(200 kHz spacing)25 3 2512(4)Pulse(100 sec, 20%Duty Cycle)25 512(4) Load Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W)TestVoltageResult30(1)CW>6 5:1at all (3 dBOverdrive)50No DeviceDegradation512(2) (3 dBOverdrive)512(4)Pulse(100 sec, 20%Duty Cycle) Peak(3 dBOverdrive)512(4) (3 dBOverdrive)1.

2 Measured in MHz broadband reference Measured in 30--512 MHz broadband reference The values shown are the minimum measured performance numbers across theindicated frequency Measured in 512 MHz narrowband test Wide Operating Frequency Range Extreme Ruggedness Unmatched, Capable of Very Broadband Operation Integrated Stability Enhancements Low Thermal Resistance Extended ESD Protection Circuit In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Number: MRFE6VS25 LRev. 0, 10/2012 Freescale SemiconductorTechnical MHz, 25 W, 50 VWIDEBANDRF Power LDMOS TRANSISTORMRFE6VS25LR5 Note: The backside of the package is thesource terminal for the I -- 3 6 0 -- 2(Top View)Drain12 Figure 1.

3 Pin ConnectionsGate Freescale Semiconductor, Inc., rights Device DataFreescale Semiconductor, 1. Maximum RatingsRatingSymbolValueUnitDrain--Sourc e , +133 VdcGate--Source , +10 VdcStorage Temperature RangeTstg--65 to +150 CCase Operating Temperature RangeTC--40 to +150 COperating Junction Temperature Range(1,2)TJ--40 to +225 CTable 2. Thermal CharacteristicsCharacteristicSymbolValue (2,3)UnitThermal Resistance, Junction to CaseCW: Case Temperature 81 C, 25 W CW, 50 Vdc, IDQ= 10 mA, 512 MHzR C/WThermal Impedance, Junction to CasePulse: Case Temperature 77 C, 25 W Peak, 100 sec Pulse Width,20% Duty Cycle, 50 Vdc, IDQ= 10 mA, 512 MHzZ C/WTable 3.

4 ESD Protection CharacteristicsTest MethodologyClassHuman Body Model (per JESD22--A114)2, passes 2000 VMachine Model (per EIA/JESD22--A115)B, passes 200 VCharge Device Model (per JESD22--C101)IV, passes 1200 VTable 4. Electrical Characteristics(TA=25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO ff CharacteristicsGate--Source Leakage Current(VGS=5 Vdc,VDS=0 Vdc)IGSS 400nAdcDrain--Source Breakdown Voltage(VGS=0 Vdc,ID=50mA)V(BR)DSS133140 VdcZero Gate Voltage Drain Leakage Current(VDS=50 Vdc,VGS=0 Vdc)IDSS 2 AdcZero Gate Voltage Drain Leakage Current(VDS= 100 Vdc, VGS=0 Vdc)IDSS 7 AdcOn CharacteristicsGate Threshold Voltage(VDS=10 Vdc,ID=85 Adc)VGS(th) Quiescent Voltage(VDD=50 Vdc,ID= 10 mAdc, Measured in Functional Test)VGS(Q) On--Voltage(VGS=10 Vdc,ID= 210 mAdc)VDS(on)

5 VdcDynamic CharacteristicsReverse Transfer Capacitance(VDS=50 Vdc 30 mV(rms)ac @ 1 MHz, VGS=0 Vdc)Crss pFOutput Capacitance(VDS=50 Vdc 30 mV(rms)ac @ 1 MHz, VGS=0 Vdc)Coss pFInput Capacitance(VDS=50 Vdc,VGS=0 Vdc 30 mV(rms)ac @ 1 MHz)Ciss pF1. Continuous use at maximum temperature will affect MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by Refer to AN1955,Thermal Measurement Methodology of RF Power to SelectDocumentation/Application Notes -- AN1955.(continued)MRFE6VS25LR53RF Device DataFreescale Semiconductor, 4. Electrical Characteristics(TA=25 C unless otherwise noted)(continued)CharacteristicSymbolMin TypMaxUnitFunctional Tests(In Freescale Test Fixture, 50 ohm system) VDD=50 Vdc,IDQ=10mA,Pout= 25 W Peak (5 W Avg.)

6 , f = 512 MHz,Pulse, 100 sec Pulse Width, 20% Duty CyclePower Efficiency %Input Return LossIRL -- 1 6-- 1 0dBLoad Mismatch/Ruggedness(In Freescale Test Fixture, 50 ohm system) IDQ= 150 mAFrequency(MHz)SignalTypeVSWRPin(W)Test Voltage, VDDR esult512 Pulse(100 sec, 20% Duty Cycle)>65:1at all Phase Peak(3 dB Overdrive)50No (3 dB Overdrive)4RF Device DataFreescale Semiconductor, , DRAIN--SOURCE VOLTAGE (VOLTS)Figure 2. Capacitance versus Drain--Source VoltageC, CAPACITANCE (pF)30 Ciss101 CossCrssMeasured with 30 mV(rms)ac @ 1 MHz, VGS=0 Vdc4050 IDQ=10mAFigure 3. Normalized VGSversus QuiescentCurrent and Case TemperatureNORMALIZED VGS(Q)TC, CASE TEMPERATURE ( C) 5 00--252550 VDD=50 Vdc150 mA75100 mA10 IDQ(mA)Slope (mV/ C) , JUNCTION TEMPERATURE ( C)107106104110 130150 170190 MTTF (HOURS)210230105ID= AmpsVDD=50 VdcFigure 4.

7 MTTF versus Junction Temperature -- CWNote:MTTF value represents the total cumulative operating timeunder indicated test calculator available at SelectSoftware & Tools/Development Tools/Calculators to access MTTF calculators by :For pulse applications or CW conditions, use the MTTF calculator referenced Device DataFreescale Semiconductor, MHz NARROWBAND PRODUCTION TEST FIXTUREF igure 5. MRFE6VS25LR5 Narrowband Test Circuit Component Layout 512 MHzCUT OUT AREAMRFE6VS25 LRev. 3C1B1C2C3L1C4C8C7C5C6L2L3C10C9C12C13C11B 2C14C15 Table 5. MRFE6VS25LR5 Narrowband Test Circuit Component Designations and Values 512 MHzPartDescriptionPart NumberManufacturerB1, B2 Long Ferrite Beads2743021447 Fair-RiteC122 F, 35 V Tantalum CapacitorT491X226K035 ATKemetC2, F Chip CapacitorsCDR33BX104 AKWSAVXC3, F Chip CapacitorsC0805C103K5 RACK emetC4, C12, C15180 pF Chip CapacitorsATC100B181JT500 XTATCC518 pF Chip pF Chip CapacitorATC100B2R7BT500 XTATCC715 pF Chip CapacitorATC100B150JT500 XTATCC836 pF Chip pF Chip CapacitorATC100B4R3CT500 XTATCC1313 pF Chip CapacitorATC100B130JT500 XTATCC14470 F.

8 63 V Electrolytic CapacitorMCGPR63V477M13X26-RHMulticompL1 33 nH nH InductorA04 TJLCC oilcraftL382 nH , r= Device DataFreescale Semiconductor, MicrostripZ4* MicrostripZ6* MicrostripZ14* MicrostripZ16* MicrostripZ17* Microstrip* Line length includes microstrip bendsTable 6. MRFE6VS25LR5 Narrowband Test Circuit Microstrips 512 MHzDescriptionMicrostripDescriptionMicro stripFigure 6. MRFE6VS25LR5 Narrowband Test Circuit Schematic 512 MHzZ1 RFINPUTC5Z2Z4 DUTC15 RFOUTPUTC2C9C14Z16Z3Z5C3Z15Z14Z13Z12Z11Z 10Z8Z7Z6C1Z17Z18C10C6C7C8L1B1+C4Z9L2C11C 13Z19B2L3C12+VBIASVSUPPLYMRFE6VS25LR57RF Device DataFreescale Semiconductor, CHARACTERISTICS 512 MHz0 VGS, GATE--SOURCE VOLTAGE (VOLTS)Figure 7.

9 CW Output Power versus Gate--SourceVoltage at a Constant Input Power03228 Pout, OUTPUT Power (WATTS) 50 Vdc, f = 512 MHz24201 Pin= = 512 MHz161210 Pin, INPUT Power (dBm)Pout, OUTPUT Power (dBm) (MHz)P1dB(W)P3dB(W)Figure 8. CW Output Power versus Input Power2330220902770605040 Pout, OUTPUT Power (WATTS)Figure 9. Power Gain and Drain Efficiencyversus CW Output Power and Quescient CurrentGps, Power GAIN (dB) D,DRAIN EFFICIENCY (%)2928261050100 mA150 mAVDD= 50 Vdc, f = 512 MHz2530 Gps2480 IDQ= 150 mA50 mA100 mA50 mA10 mA2128110901026248070605040 Pout, OUTPUT Power (WATTS)Figure 10. Power Gain and Drain Efficiencyversus CW Output PowerGps, Power GAIN (dB) D,DRAIN EFFICIENCY (%)2725235025_CTC=--40_C85_C85_CVDD=50 VdcIDQ=10mAf = 512 MHz25_C-- 4 0_C2230 Gps D20290 Pout, OUTPUT Power (WATTS) PEAKF igure 11.

10 Power Gain versus Output Powerand Drain--Source Voltage162625 Gps, Power GAIN (dB)222120191815202530352423 VDD=20V5101725 VIDQ=10mA,f=512 MHzPulse Width = 100 sec20% Duty Cycle272810 mA D30 V35 V40 V45 V50 V8RF Device DataFreescale Semiconductor, MHz NARROWBAND PRODUCTION TEST FIXTUREVDD=50 Vdc,IDQ=10mA,Pout= 25 W PeakfMHzZsource Zload + + Test circuit impedance as measured fromgate to Test circuit impedance as measured fromdrain to 12. Narrowband Series Equivalent Source and Load Impedance 512 MHzInputMatchingNetworkDeviceUnderTestOu tputMatchingNetworkZsourceZload50 50 MRFE6VS25LR59RF Device DataFreescale Semiconductor, MHz HF BROADBAND REFERENCE CIRCUITT able 7.