Transcription of Transphrom–氮化镓FET(HEMT)
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Transphrom–氮化镓FET(HEMT)
Transphrom FET(HEMT) ,HEMT: High Electron Mobility Transistor MOSFET (600 VDC, 1uS,100nS , 750V)Part NumberPackageVoltage (V)Current (A) Ron(Ohm)DescriptionTPH3245ED QFN 5* D TPH3002LD QFN 8* D TPH3002LS QFN 8* S TPH3002PD D TPH3002PS S TPH3006LD QFN 8* D TPH3006LS QFN 8* S TPH3006PD D TPH3006PS S TPH3205WS S Demo -Transphorm FET LED RF GaN 8 12 GaN, SiC Si,SiC,GaN GaN and SiC offer: GaNoffers: SiC offers: 2007 Goleta 130 250 JEDEC GaN Transphorm , FET HEMT1, MOS PN 2 D,S /Normally On3 G D,S 30V MOSFET 0V 5V MOSFET MOS P/N D , P/N FET 2V (5V , 0V ) +/ 18V max.
DS 600V @ 25 ⁰C 600V (spike ... Figure of Merit Discrete Ratings. Qualified GaN on Silicon products from Transphorm: TO220 & PQFN (Production), TO247 (Eng Samples) Specification Production Eng Samples Part No. TPH3006PS/PD TPH3002PS/PD TPH3006LS/LD TPH3002LS/LD TPH3205WS Source Tab (PS) ...
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