Transphrom–氮化镓FET(HEMT)

1 Transphrom FET(HEMT) ,HEMT: High Electron Mobility Transistor MOSFET (600 VDC, 1uS,100nS , 750V)Part NumberPackageVoltage (V)Current (A) Ron(Ohm)DescriptionTPH3245ED QFN 5* D TPH3002LD QFN 8* D TPH3002LS QFN 8* S TPH3002PD D TPH3002PS S TPH3006LD QFN 8* D TPH3006LS QFN 8* S TPH3006PD D TPH3006PS S TPH3205WS S Demo -Transphorm FET LED RF GaN 8 12 GaN, SiC Si,SiC,GaN GaN and SiC offer: GaNoffers: SiC offers: 2007 Goleta 130 250 JEDEC GaN Transphorm , FET HEMT1, MOS PN 2 D,S /Normally On3 G D,S 30V MOSFET 0V 5V MOSFET MOS P/N D , P/N FET 2V (5V , 0V ) +/ 18V max.

2 GATE ON,Silicon labs,Fairchild, 100mA IC 30V (LV) Si FET Low Qg. & Low Qrr 30V Si Mosfet FET Transphorm GaN 1 dv/dt 100 SI+GaN FET . GaN,Si FET (Layout ) FET Cool Mosfet ParametersIPA60R160C6 TPH3006 PSStaticVDS600V @ 25 C600V (spike rating 750V)RDS(25 C) nCQgd38 (er)66 pF [1]56 pF [1]Co(tr)314 pF [1]110 pF [1]ReverseOperationQrr8200 nC[2]54 nC[3]trr460 ns [2]30 ns [3][1] VGS= 0V, VDS= 0 480V[2] VDS= 400V, IDS= , di/dt = 100A/ s[3] VDS= 480V, IDS= 9A, di/dt = 450A/ s 100mA / Rds(on) GaN Si MOSFET/ Cool Mos MOSFET -HEMTMOSFET :1,Rds(on) , 2, CCM), 3, , 4, ( ,DCM). MOS :1,Rds(on) .. t ( s)Vs(V)DT400nSt ( s)Vs(V)Ipr(A)DT120nS Transphorm GaN FET 750V 100nS Spike750V900V +-VDSP ulse Width 1uSDuty Ratio = 1 Spike Voltage Test Circuit 3 , >77 JEDEC >10 KHz, 10% 750V 100nS spike ProductTBA (TO247)900&1200V/80m TPH3006LS/LD (PQFN) 600v /150m Alpha sample:Beta sample:TPH3002PS/PD (TO220) 600v /290m *M: Module **FQS: 4 quadrant (bi directional) switchQFN 5x6/SO8600V/500m ProprietaryTransphorm Product RoadmapTPD2015M*(Custom module) 600v /40m TPH3205WS (TO247) 600v /63m TPD3215M*(Custom module) 600v /30m TPH3206PS/PD(TO220) 600v /120m TPH3002LS/LD (PQFN) 600v /290m TPF4003** (SO16w) FQS 600v /150m TPD3248M*(Custom module) 600v /23m YearTBA (bump die)150V/10m TPH3006PS/PD(TO220) 600v /150m 2013201420152016 TPH3308 (TO220) 600v /80m TPH4306(TO220)600VE mode Gen 1: TPH3006, Gen 2: TPH3206, Gen 3: TPH3308, E mode.

3 TPH4306 TPH3305WS (TO247) 600v /45m Technology RoadmapCascodeE modeLarge room for figure of merit improvement in device designs leading to reduced on resistance in basic package (TO220)Continuous drive for high current ratings in a discrete package from FOM improvement +lager die+TO247 YearOn Resistance ( )Rate Current (A)Rate Power (kW)YearFOM(A)TO220TO247 Figure of MeritDiscrete RatingsQualified GaN on Silicon products from Transphorm:TO220 & PQFN (Production), TO247 (Eng Samples)SpecificationProductionEng SamplesPart Tab (PS) Drain Tab (PD) Source Dap (LS) Drain Dap (LD) Source Tab OnlyPackageTO220TO220 PQFN88 PQFN88TO247 RDS(ON)Typ. (OHM) C (A) 17917934Co(er) (pF)56365636170Co(tr) (pF)1106311063283Og (ns) (ns)3030303030 Qrr (nC)54295429138 Vgs(V) (Gate Voltage) +/ 18+/ 18+/ 18+/ 18+/ 18 S D S S 0V (A) D D (B)VCCLRLQ1 VVDSGDSGDSGAC groundGDSG roundDrain connected to caseSourceconnected to case(B)(A)High side switchLow side switchQuiet Tab package made possible by lateral GaN devicesTPH3002PS -- S TO-220 600v /9A)TPH3002PD D TPH3002LD -- D QFN 8x8)The Quiet TabTM TO 220 Package MatchesGaN s High Switching Speed VINVOUTGate DriverVINVOUTIINDGate Driver TO 220 MOSFET D S D Quiet TabTMTO220 GaN HEMT IGIDIGID D Vgs Kelvin S , S GATE D Vgs Kelvin.

4 G,S,D DSGDSGSDIINDD river 1 3 Driver 1 2 PFC Switching Conditions V in = 220v dc V out = 400v dc Frequency = 100kHz, 400w Uses TPS2012PK; lowest loss 600v /6A GaN diode Boost converter efficiency = Boost design using Transphorm s GaN MOSFET and GaN Diode producing >99% efficiency and using fewer components COOL-MOSFET MOSFET Snubber W +VOUTDSGL1C1D1+VINL1Q1Q1CS1L1CS2DS1C1L1D 1LS++VINDS2 Efficiency (%)Loss (W)Pout(W) 97-98% MOSFET MOS CCM/ 1 Rds(on) 2 3 4 Snubber Coolmosfet 199C3+SiC Rds(on) : 63K 750K 400W PFC 5x5 3x3 10 Coolmos CCM / Cool-mos C3 Cool-Mos EMI Trr CCM / PCB 1/3 - 80% 10 2 Customer A 460W PFC 130K Cool-mos 133K EMI 460W PFC Cool-mos 100K HZ EMI 460W PFC GaN 300K HZ GAN EMI Cool-mos 100K 300 KHZ DC Gate , FET snubber TO-220 S.

5 , S .. PFC /BOOST FET FET !!PFC , GaN . , !!! :CoolMOS TO 220 Vs. GaN HEMT in Quiet TabTM TO 220 CoolMOS 60R199, Rg=0(Leads cut to shortest with standoff)TPH3006, Rg=0(Tab used for grounding) Cool Mos Gate Vds 600v EMI GATE Operation Waveforms: Slowed down CoolMOS Vs. Fast GaNCoolMOS 60R199, Rg=25(Leads cut to shortest with standoff)TPH3006, Rg=0(Tab tied to grounded heat sink) COOL MOS 25 VDS 10 VDS . EMI GaN (Boost ) GaN HEMTs is capable of dV/dt of >100V/ns. Resultant high di/dt causes apparent Vgs dips in conventional wiring. Kelvin source wiring eliminates the large Vgs dip. Kelvin Kelvin EMI BOOST : Turn-off Waveforms Turn off event: Inductor current charges capacitances.

6 Di/dt not high. No issue for Vgs even with conventional wiring. Vds spike is due to inductance of the diode path. Close diode placement is desired. EMIVds FET Vds - KELVIN FET +VOUTDSGL1C1D1+VINL1Q1 Cool Mos FET BOOST 100 kHzLoss breakdownPOUT(W)Eff. (%)Loss (W)GaN devices: TPH3006PS & TPS3411 PKSi devices: CoolMOS & QSpeed diodesVIN/VOUT=230V/400V, f=100kHz Transphorm Total GaNTMsolution outperforms matured Si solution GaN cuts device loss by 33% ( of total loss) at full load ( ) GaN achieves 99% efficiencyBoost 100 KCool-Mos Boost 100K 100K 1/4 Boost 100 KCool-Mos Boost 100K 100K 1/4 +VOUTDSGL1C1D1+VINL1Q1 Cool-Mos FET BOOST 500 kHzPOUT(W)Eff. (%)Loss (W)GaN devices: GaN on Si HEMT & diodeSi devices: CoolMOS & QSpeed diodeVIN/VOUT=230V/400V, f=500kHz GaN s advantage is amplified at high frequencies (for compact designs) due to its lower Qg and Co(er) GaN cuts device loss by 70% (total loss 55%) at Si converter cannot operate kW safely GaN >98% efficiency at 500kHzLoss breakdownBoost 500 KCool-Mos Boost 500K 500K 3/5 +VOUTDSGL1C1D1+VINL1Q1 Cool Mos CFD Qrr/Trr CFD Qrr=54nCat 9A, 400 VQrr=1000nCat 9A, 400V Both measured in the same test board TransphormGaN HEMT was tested at 450A/ s with little ringing CoolMOSwas not stable at 450A/ s.

7 DI/dt reduced to 100A/ sfor stability. GaN HEMT has Qrr of ~20x less than CFD type CoolMOS (Low Qrr design).1stGen 600v GaN on Si HEMT Compared toSi Super Junction MOSFET 1stgeneration GaN is already superior to Si GaN still has ample potential to improvedDevicesParametersOn resistance ( )Gate charge (nC)Output charge (nC)Energy related Coss(pF)Reverse recovery charge ( C)FOM1 AFOM1B FOM2 Symble Rds, onQgQossCoerQrrRon*Qg Ron*Qoss Ron*QrrGaN HEMT TPH3006 GaN CoolMOS60R199CP SJ Si Gen5 CoolMOS60R190C6 SJ Si Gen6 CoolMOS65R2250C7 SJ Si Gen7 CoolMOS20N60 CFDSJ Si for Low MOS MOS 1,Rds(on) 2, 3, 4, LLC DCX , Fs=Fo Gain equals one Simple SR driving scheme Lowest Conduction loss LLC Input: 380~420 VDC Output:12V/25A Fs: 500kHzHigh step down LLC ConverterFs=FoLLC Resonant ConverterGaN Low residue charge for GaN allows for a fast reset time & a much reduced recirculation energyCourtesy: Work done by Virginia LLC 1% 3% Rds(on)GaNCool-MosGaN vs CoolMosfet 500K LLC10% 50% 100% TIL IMVinCossCossIM2 OSS indMCVtI 16 OdOSSmTtCL Larger Lm, Less circuilating energySmaller td, Less duty cycle loseCOSS(tr)(pF) MOSFET /Cool-Mosfet100 Cascode GaN FET25 With much smaller Coss,GaN can achieve both Td Lm Td Coss Coss Experiment PlatformParametersValueParametersValueVi n(V)400Vo(V)/IO(A)12/25 Transformer Turn Ratio16:1Fs(kHz)500 Core MaterialN49 Primary switchTPH2002 Core ShapeER32/5/21 SRBSC017N04 NSCascode GaN.

8 TPH2002 290 30*90DC400V 12V/25A Experiment Waveforms @500kHz ( Cool Mos )iLr(1A/div)40ns/diviLr(1A/div)iLr(2A/di v)Vds(100V/div)Vgs(10V/div)Zoom inZoom inIM= (2A/div)Vds(100V/div)Vgs(10V/div)400ns/d ivtd=80nstd=110nsGaNSi MosCoolMOSGaNt ( s)Vs(V)Ipr(A)t ( s)Vs(V)Ipr(A)t ( s)Vs(V)Ipr(A)t ( s)Vs(V)Ipr(A) LLC Cool Mos Si shows large DT: less time for energy transfer: more lossDTDT400nS120nS Adapter MOSFET GaN 15W 94% 24W 96% 40W TPH3002LD 200K 1% 90W: PFC+LLC65W: FLYBACK48W: FLYBACK36W: FLYBACK(200kHz)(200kHz)50% smaller30% smaller50%smaller(integrated into transformer)50% Less(100kHz)(65kHz)Cool-Mos C6 + PFC: 65 KHZLLC: 100 KHZ90-260 Vac 12 Vout, 93% MOS+ PFC: 200 KHZLLC: 200 KHZ90-260 Vac 12 Vout, LLC 216W PFC+LLC Cool Mos VS 3% Rds(on):300mOHM Cool mos199C6 Rds(on):190mOHM PFC 65K LLC 100K 200K 96% PWM: 200kHz for GaN50 80kHz for Si Size: 45% reduction Efficiency.

9 + at full load +3% at 10% load 93% 96% 50% COOLMOS CoolMos, 190 300 250W PFC+LLC C6 PFC 1000W 133K(C6 AC + +PFC 400V CoolMos 1% 133 KPFC NCP1654-133 MOS + PFC133kHz PFC 500W 160C6 40% 48 Cool-Mos 70 PFCPFC Bias Power 52mW Rds(on) COOL-MOS 160mW PFC Dual boost PFCPFC 2 MOSFET 2 2 D1,D2) PFC 2 MOS, D1,D2 MOSFET PFC / PFC /Totem Pole PFC FET PFC PFC PFC Q1,Q2 FET CCM 1000W PFC PFC230V:400V boostTotem poleTotem pole with EMI filter and current AC DC 1000W)POUT(W)Eff.

10 (%) Transphorm PFC LLC 1000W PFC LLC 1000W INVERTER GaN 1500W DEMO DC400 Vin, 240 Vacout, , TI DSPSI-8230 Silicon-LabsTPH3006PS , , 100 USD, 100 USD.. 4500W, 16K 50K , , , ,EMC , Output power (Single Phase 200V) Input voltage 60-400V Maximum Power Efficiency > 98% (vs. > with Silicon) Volume about 10L <18L (existing Silicon based)>40% loss reductionGaN modules allowed for kW class PV power conditioner with 40% smaller size and loss40% volume reductionCourtesy: Testing done and published by Yaskawa Electric. 600v MOSFET 400V 98 MOSFET, boost * * +VOUTDSGL1C1D1+VINL1Q1 THP3006 COOL-MOSFET C6 C VS C Pure sine-wave motor drive (2-8% points efficiency gain for the system).