Transcription of SiC Power Devices and Modues Application Note
1 1/88 2017 ROHM Co., Ltd. No. 60AP001E 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Application Note Note: The evaluation data and other information described in this Application note are the results of evaluation by ROHM under identical conditions and presented as references. We do not guarantee the characteristics described herein. 2/88 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Contents 1. SiC semiconductor.
2 5 Physical properties and features of SiC .. 5 Features as Power Devices .. 5 2. Features of SiC SBD .. 6 Device structure and features .. 6 Forward characteristics of SiC SBD .. 7 Recovery characteristics of SiC SBD .. 8 Forward surge characteristics of SiC SBD .. 9 Precautions for using SiC SBD in series or parallel .. 10 Series connection .. 10 Parallel connection .. 10 3. Features of SiC MOSFET .. 11 Device structure and features .. 11 Standardized on-resistance (RonA) .. 12 VDS-ID characteristics.
3 13 Driving gate voltage and on-resistance .. 14 Temperature coefficient of on-resistance .. 15 VGS-ID characteristics .. 16 Turn ON characteristics .. 17 Turn OFF characteristics .. 18 Internal gate resistance .. 19 Recovery characteristics of body diode .. 20 Temperature dependence of BV (breakdown voltage) .. 21 1700 V SiC MOSFET for flyback .. 22 Third generation trench gate SiC MOSFET .. 23 Temperature dependence of switching 24 Gate voltage dependence of switching characteristics .. 25 Drain current dependence of switching speed.
4 25 Effect of parasitic inductance on switching characteristics .. 26 Kelvin source package .. 27 4. Evaluation board for discrete SiC MOSFET .. 28 Evaluation board for SiC MOSFET (discrete) .. 28 Case example of evaluation .. 29 5. Gate drive .. 32 .1 Cautions for circuit systems .. 32 Driving with pulse transformer .. 32 High-side driving with bootstrap system .. 32 High-side driving with isolated Power supply .. 32 Negative bias generation circuit .. 33 .2 Buffer circuit .. 34 .3 UVLO (under voltage lock out: function to prevent malfunction at low voltage).
5 35 .4 Gate driver IC for SiC MOSFET .. 36 .5 Recommended gate voltage (VGS) .. 37 3/88 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules .6 Recommended external gate resistance (RG_EXT) .. 38 .7 Recommended dead time (tDT) .. 39 .8 Countermeasures against self-turn-on .. 40 .9 Countermeasures against negative surge .. 41 .10 Short-circuit protection .. 42 DESAT .. 42 Short-circuit protection in MOSFET equipped with current sense terminal .. 43 .11 Recommended layout .. 44.
6 12 Precautions for using MOSFET in series or parallel .. 46 Series connection .. 46 Parallel connection .. 48 6. Features of SiC Power module .. 52 Features of SiC module .. 52 Circuit configuration .. 52 NTC 54 Installation method for Power module .. 56 Installation of heatsink .. 56 Installation of signal wires .. 57 Switching characteristics .. 58 Drain current dependence and temperature dependence .. 58 Gate resistance dependence .. 59 Gate bias dependence .. 60 Comparison of switching loss with IGBT module.
7 61 Comparison of total switching loss .. 61 Comparison of recovery loss (Err) .. 61 Comparison of turn ON loss (Eon) .. 62 Comparison of turn OFF loss (Eoff) .. 62 Countermeasure against self-turn-on .. 63 RBSOA (reverse bias safe operating area) .. 64 VDS surge of diode conducting narrow pulse of small current .. 65 G-type Power module .. 66 7. Evaluation board for module .. 67 Drive board for SiC Power module .. 67 Countermeasures against surge voltage .. 68 8. Reliability .. 70 Reliability of SiC SBD.
8 70 dV/dt failure and dI/dt failure .. 70 Result of reliability test for SiC SBD .. 71 Reliability of SiC MOSFET .. 73 Gate oxide film .. 73 Threshold stability (gate positive bias) .. 74 Threshold stability (gate negative bias) .. 74 Threshold stability (third generation MOSFET) .. 75 Short-circuit rating .. 75 dV/dt failure .. 75 4/88 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules Cosmic ray neutron-induced single-event effects .. 76 Electrostatic discharge rating.
9 77 Cautions for Power cycle .. 77 Reliability of SiC Power module .. 79 Power cycle .. 79 HV-H3 TRB (High Voltage High Humidity High Temperature Reverse Bias) .. 80 Result of reliability test for SiC Power module .. 81 9. Construction of model name .. 82 SiC SBD (discrete product) .. 82 SiC MOSFET (discrete product) .. 82 SiC Power module .. 83 SiC SBD (chip product) .. 83 SiC MOSFET (chip product) .. 84 10. Example of Application 85 Power factor correction (PFC) circuit, boost chopper .. 85 Buck chopper.
10 85 Buck-boost chopper .. 85 Totem pole PFC .. 86 Flyback converter .. 86 DC/DC converter (soft switching type) .. 86 Inverter for Power conditioner .. 87 Inverter for IH .. 87 Motor drive .. 87 Relay .. 88 5/88 2020 ROHM Co., Ltd. No. 63AN102E Application Note SiC Power Devices and Modules 1. SiC semiconductor Physical properties and features of SiC SiC (silicon carbide) is a compound semiconductor material composed of silicon (Si) and carbon (C). Table 1-1 shows the electrical characteristics of each semiconductor material.
