1. はじめに 2. GaNパワーデバイスへの期待
Transistor）やIGBT（Insulated Gate Bipolar Transistor）が 広く用いられている。これらのSiデバイスは，材料物性に 起因する性能限界に近づいており，高耐圧を維持した上 で，今後の更なる低オン抵抗化と高速化は困難になりつ つある。
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