Search results with tag "Insulated gate bipolar"
Insulated Gate Bipolar Transistors (IGBTs) are used in switching applications for automobile and train traction motors, in high voltage power supplies, and in aerospace ... capabilities of a bipolar junction transistor (BJT). The structure of an IGBT is similar to that of a vertical
RF Power Amplification Using a High Voltage, High Current IGBT New insulated gate bipolar transistors offer some amazing power amplifier ... show. 1Notes appear on page 20. This article describes experiments, calcu - lations, modeling, and analysis of a specific insulated gate bipolar transistor (IGBT) device. Originally, a casual examination ...
We propose a new high power insulated gate bipolar transistor with a p-/n+ buffer layer to improve the characteristics of high power IGBTs used in motor control inverters during high voltage operation. The new structure with a p-floating layer inserted between n-epi and n+
A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses. 15.
Junction Transistor (BJT) was modeled in series to represent an IGBT. • Failure rate is calculated by multiplying a base failure rate with several conditional factors.
the silicon bipolar power transistor has been replaced by the silicon power MOSFET. In the case of high voltage (>100V)systems, the silicon bipolar power transistor has …