Application Note - MACOM

MAPS-010144 - MACOM

The MAPS-010144 is a GaAs pHEMT 4-bit digital phase shifter with an integrated CMOS driver in a 4 mm PQFN plastic surface mount package. Step size is 22.5° providing phase shift from 0° to 360° in 22.5° steps. This design has been optimized to minimize variation in attenuation over the phase shift ...

  Amps, 100414, Maps 010144

MAPS-010166 - MACOM

The MAPS-010166 is a GaAs pHEMT 6-bit digital phase shifter with an integrated CMOS driver in a 4 mm PQFN plastic surface mount package. Step size is 5.6° providing phase shift from 0° to 360° in 5.6° steps. This design has been optimized to minimize variation in attenuation over the phase shift ...

  Amps, 106016, Maps 010166

MRF171A - MACOM

The RF MOSFET Line 45W, 150MHz, 28V Rev. V1 MRF171A 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

  Mrf171a, 150mhz

MAAP-011246 GND 8 17 GND Power Amplifier, 2 W Rev. V3 9 …

Power Amplifier, 2 W 27.5 - 31.5 GHz Rev. V3 V MAAP-011246 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

MADP-000907-14020x

14020 allows for operation at millimeter wave frequencies for RF switches and phase shifter applications. The diode is designed to be used in pulsed or CW applications, where single digit ns switching speed is required. The low capacitance of the PIN diode makes it ideal for use in many

  Waves, Millimeter, Pmda, Millimeter wave, Madp 000907 14020x, 000907, 14020x

Application Note - MACOM

1.75 1.203 0.5869 -54.92 0.4133 2 1.228 0.6579 -47.48 0.5616 Noise Parameters (cont’d) The frequency is governed by the option line. The NF is the minimum noise figure in dB. The |G| and ÐG are the linear magnitude and phase of the optimum reflection coefficient respectively. The for…

  Coefficients

ETC1-1-13 - MACOM

E-Series Transformer, RF 1:1 Transmission Line 4.5 - 3000 MHz Rev. V12 ETC1-1-13 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

  Solutions, Transmissions, Tec1, Etc1 1 13

Power MOSFET Basics - Alpha & Omega Semiconductor

5. Gate Charge 6. Gate Resistance 7. Turn-on and Turn-off 8. Body Diode Forward Voltage 9. Body Diode Reverse Recovery 10. Avalanche capability and ratings 11. dV/dt ratings 12. Thermal Resistance Characterization 13. Power Dissipation 14. Safe-Operating Area 15. Current Ratings 1. Basic Device Structure Power MOSFETs (Metal Oxide Semiconductor ...

  Devices, Power, Charges, Semiconductors

ECE 410: VLSI Design Course Lecture Notes

ECE 410, Prof. F. Salem Lecture Notes Page 2.8 CMOS Technology Trends • Variations over time – # transistors / chip : increasing with time – power / transistor : decreasing with time (constant power density) – device channel length : decreasing with time

  Lecture, Notes, Devices, Design, Technology, Power, Course, Vlsi, Vlsi design course lecture notes

Solar Energy -- Energy from the Sun - Lehigh University

commonly called a solar cell or PV, is the technology used to convert solar energy directly into electrical power. A photovoltaic cell is a nonmechanical device usually made from silicon alloys. Sunlight is composed of photons, or particles of solar energy. These photons contain various amounts of energy corresponding to the different

  Devices, Technology, Power, Energy, Silicon