Basic PECVD Plasma Processes (SiH based)
Youngs modulus, Poisson ratio and substrate and film thickness change in wafer bow, radius of scan where : film stress 2 2 3(1). ( ). = = = ∆ = = = − ∆ = E υ t substrate t film r film substrate E t t r σ υ σ ∆, r, and thicknesses must be measured in the same unit, e.g. cm or µm
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