Lecture 3 - MIT
6.012 Spring 2007 Lecture 3 10 Numerical Example: Si with Nd = 3 x 1016 cm-3 at room temperature µn ≈1000 cm2 / V •s ρncm n ≈3X10 16 cm−3 Apply E = 1 kV/cm 3 2 6 4.8 10 / 10 / J A cm E J qnv qn E E v cm s v drift n dn n drift n dn th ≈ × ≈ = µ = = ≈ << ρ σ Time to drift through L = 0.1 µm td = L vdn =10 ps fast!
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