N-Channel 200-V (D-S) 175 °C MOSFET

1 vishay SiliconixSUP57N20-33 Document Number: 72100S-71662-Rev. B, 200-V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFET 175 C Junction TemperatureAPPLICATIONS Isolated DC/DC converters- Primary-Side SwitchPRODUCT SUMMARY V(BR)DSS (V)rDS(on) ( )ID (A) at VGS = 10 V57TO-220 ABTop ViewGD SDRAIN connected to TABO rdering Information: SUP57N20-33 SUP57N20-33-E3 (Lead (Pb)-free)DGSN- channel MOSFETN otes: a. Duty cycle 1 %.b. See SOA curve for voltage When Mounted on 1" square PCB (FR-4 material).* Pb containing terminations are not RoHS compliant, exemptions may MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol LimitUnit Drain-Source Voltage VDS200 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175 C)TC = 25 CID57 ATC = 125 C33 Pulsed Drain CurrentIDM140 Avalanche CurrentIAS35 Single Pulse Avalanche EnergyaL = mHEAS61mJMaximum Power DissipationaTC = 25 CPD300bWTA = 25 Junction and Storage Temperature Range TJ, Tstg- 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter Symbol LimitUnit Junction-to-Ambient (PCB Mount)cRthJA40 C/WJunction-to-Case (Drain) * Number: 72100S-71662-Rev.

2 B, 06-Aug-07 vishay SiliconixSUP57N20-33 Notes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions Min TypMaxUnit StaticDrain-Source Breakdown VoltageV(BR)DSSVDS = 0 V, ID = 250 A 200 VGate-Threshold VoltageVGS(th) VDS = VGS, ID = 250 A 24 Gate-Body LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = 160 V, VGS = 0 V 1 AVDS = 160 V, VGS = 0 V, TJ = 125 C 50 VDS = 160 V, VGS = 0 V, TJ = 175 C 250On-State Drain CurrentaID(on)

3 VDS 5 V, VGS = 10 V 120 ADrain-Source On-State ResistancearDS(on) VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125 = 10 V, ID = 30 A, TJ = 175 Transconductanceagfs VDS = 15 V, ID = 30 A 25 SDynamicbInput CapacitanceCissVGS = 0 V, VDS = 25 V, f = 1 MHz 5100pFOutput CapacitanceCoss480 Reverse Transfer CapacitanceCrss 210 Total Gate ChargecQgVDS = 100 V, VGS = 10 V, ID = 85 A 90130nCGate-Source ChargecQgs 23 Gate-Drain ChargecQgd 34Tu r n - O n D e l a y T i m ectd(on) VDD = 100 V, RL = ID 65 A, VGEN = 10 V, RG = 2435nsRise Timectr220330 Turn-Off Delay Timectd(off) 4570 Fall Timectf200300 Source-Drain Diode Ratings and Characteristics (TC = 25 C)bContinuous CurrentIS65 APulsed CurrentISM140 Forward VoltageaVSDIF = 65 A, VGS = 0 Recovery TimetrrIF = 50 A, di/dt = 100 A/ s 130200nsPeak Reverse Recovery CurrentIRM(REC)812 AReverse Recovery CDocument Number: 72100S-71662-Rev.

4 B, SiliconixSUP57N20-33 TYPICAL CHARACTERISTICS 25 C, unless otherwise notedOutput CharacteristicsTransconductanceCapacitan ce0204060801001201400246810 VDS - Drain-to-Source Voltage (V)VGS = 10 thru 7 V4 V- Drain Current (A)ID6 V5 V0306090120150180020406080100120- Transconductance (S)gfsTC = - 55 C25 C125 CID - Drain Current (A)0100020003000400050006000700002550751 00125150 VDS - Drain-to-Source Voltage (V)C - Capacitance (pF)CissCossCrssTransfer CharacteristicsOn-Resistance vs. Drain CurrentGate Charge02040608010012014001234567 VGS - Gate-to-Source Voltage (V)- Drain Current (A)ID25 C- 55 CTC = 125 - Drain Current (A)VGS = 10 V- On-Resistance ( )rDS(on)0481216200255075100125150- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VGSVDS = 100 VID = 65 Number: 72100S-71662-Rev. B, 06-Aug-07 vishay SiliconixSUP57N20-33 TYPICAL CHARACTERISTICS 25 C, unless otherwise notedOn-Resistance vs.

5 Junction TemperatureAvalanche Current vs. 50 - 250255075100 125 150 175TJ - Junction Temperature ( C)VGS = 10 VID = 30 A(Normalized)- On-Resistance rDS(on)tin (Sec) (A) (A) at TA = 150 (A) at TA = 25 CSource-Drain Diode Forward VoltageDrain Source Breakdownvs. Junction TemperatureVSD - Source-to-Drain Voltage (V)- Source Current (A) = 25 CTJ = 150 C0180190200210220230240- 50 - 250255075100 125 150 175TJ - Junction Temperature ( C)(V)V(BR)DSSID = mADocument Number: 72100S-71662-Rev. B, SiliconixSUP57N20-33 THERMAL RATINGS vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Avalanche and Drain Currentvs.

6 Case Temperature01020304050600255075100125150 175TC - Ambient Temperature ( C)- Drain Current (A)IDSafe Operating AreaVDS - Drain-to-Source Voltage (V) rDS(on) = 25 C Single Pulse- Drain Current (A)ID1 ms10 ms, 100 msDC10 s 100 s 1100 Normalized Thermal Transient Impedance, Junction-to-CaseSquare Wave Pulse Duration (sec) Effective TransientThermal Cycle = Document Number: : 18-Jul-081 DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product. vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law.

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