Transcription of Tall Dome Dual Channel Transmissive Optical …
1 Semiconductors Rev. , 06-Nov-151 Document Number: 84174 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Dome Dual Channel Transmissive Optical Sensorwith Phototransistor OutputsDESCRIPTIONThe TCUT1600X01 is a compact Transmissive sensor that includes an infrared emitter and two phototransistor detectors, located face-to-face in a surface mount package. The tall dome design supports additional mechanical room for vertical signal Package type: surface mount Detector type: phototransistor Dimensions (L x W x H in mm): x 4 x AEC-Q101 qualified Gap (in mm): 3 Aperture (in mm): Channel distance (center to center): mm Typical output current under test: IC = mA Emitter wavelength: 950 nm Lead (Pb)-free soldering released Moisture sensitivity level (MSL): 1 Material categorization.
2 For definitions of compliance please see Automotive Optical sensors Accurate position sensor for encoder Sensor for motion, speed, and direction Sensor for turn and push encodingNote(1)Conditions like in table basic characteristics/couplerNote(1)MOQ: minimum order quantityPRODUCT SUMMARYPART NUMBERGAP WIDTH(mm)APERTURE WIDTH (mm)TYPICAL OUTPUT CURRENT UNDER TEST (1)(mA)DAYLIGHT BLOCKING FILTER INFORMATIONORDERING CODEPACKAGINGVOLUME (1)REMARKSTCUT1600X01 Tape and reelMOQ: 1300 pcs, 1300 pcs/reelDrypack, MSL Semiconductors Rev. , 06-Nov-152 Document Number: 84174 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MAXIMUM RATINGSFig.
3 1 - Power Dissipation Limit vs. Ambient TemperatureFig. 2 - Forward Current Limit vs. Ambient TemperatureABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITCOUPLERT otal power dissipationTamb 95 temperatureTj110 CAmbient temperature rangeTamb-40 to +105 CStorage temperature rangeTstg-40 to +125 CSoldering temperatureIn accordance with fig. 16 Tsd260 CINPUT (EMITTER)Reverse voltageVR5 VForward currentTamb 95 CIF25mAForward surge currenttp 10 sIFSM200mAPower dissipationTamb 95 (DETECTOR)Collector emitter voltageVCEO20 VEmitter collector voltageVECO7 VCollector currentIC20mACollector dark currentTamb = 85 C, VCE = 5 A0510152025303540020406080100120PV - Power Dissipation (mW)Tamb - Ambient Temperature ( C)RthJA = 460 K/W2246022461051015202530020406080100120 IF - Forward Current (mA)Tamb - Ambient Temperature ( C)RthJA = 460 Semiconductors Rev.
4 , 06-Nov-153 Document Number: 84174 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Test Circuit for tr and tfFig. 4 - Switching TimesBASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig. 5 - Forward Current vs. Forward VoltageFig. 6 - Forward Voltage vs. Ambient TemperatureELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST current per channelVCE = 5 V, IF = 15 emitter saturation voltageIF = 15 mA, IC = (EMITTER)Forward voltageIF = 15 currentVR = 5 VIR--10 AJunction capacitanceVR = 0 V, f = 1 MHzCj-25-pFOUTPUT (DETECTOR)Collector emitter voltage ICIC = 1 mAVCEO20--VEmitter collector voltageIE = 100 AVECO7- -VCollector dark currentVCE = 25 V, IF = 0 A, E = 0 lxICEO-1100nASWITCHING CHARACTERISTICSRise timeIC = mA, VCE = 5 V,RL = 100 (see fig.)
5 3)tr-9150 sFall timeIC = mA, VCE = 5 V,RL = 100 (see fig. 3)tf-16150 sChannel IChannel II20688+ 5 VICadjusted by IFIF0 IFRG= 50 tptp= 1 msT= 20 Oscilloscope50 100 RL 1 M CL 20 pFtptt0010 %90 %100 %trtdtontstftoffIFICtpPulse durationtdDelay timetrRise timeton(= td + tr) Turn-on timetsStorage timetfFall timetoff(= ts + tf)Turn-off time96 - Forward Voltage (V)IF - Forward Current (mA) 50- 250255075100150 Tamb - Ambient Temperature ( C)VF - Forward Voltage (V) Semiconductors Rev. , 06-Nov-154 Document Number: 84174 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 7 - Collector Current vs.
6 Forward CurrentFig. 8 - Collector Current vs. Collector Emitter VoltageFig. 9 - Collector Emitter Saturation Voltage vs. Ambient TemperatureFig. 10 - Collector Current vs. Ambient TemperatureFig. 11 - Collector Dark Current vs. Ambient TemperatureFig. 12 - Relative Collector Current vs. Horizontal - Forward Current (mA)IC - Collector Current (mA)VCE = 5 - Collector Emitter Voltage (V)IC - Collector Current (mA)22682IF = 25 mAIF = 15 mAIF = 5 mAIF = 3 50 - 250255075125 150 Tamb - Ambient Tempearture ( C)VCEsat - Coll. Emitter Saturation Voltage (V)IF = 15 mAIF = 5 mAIC = 200 50 - 2502550100 125 150 Tamb - Ambient Temperature ( C)IC - Collector Current (mA)2268475IF = 15 mAIF = 5 mAVCE = 5 V1101001000100 000- 50 - 250255075100 125 150 Tamb - Ambient Temperature ( C)ICEO - Collector Dark Current (nA)22685 VCE = 70 VVCE = 25 VVCE = 5 V10 1- - Horizontal Displacement (mm)IC rel - Relative Collector Semiconductors Rev.
7 , 06-Nov-155 Document Number: 84174 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 13 - Relative Collector Current vs. Vertical DisplacementFig. 14 - Rise/Fall Time vs. Collector CurrentFig. 15 - Application exampleREFLOW SOLDER PROFILEFig. 16 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 FLOOR LIFEL evel 1, acc. JEDEC , J-STD-020. No time 1- - Vertical Displacement (mm)ICrel - Rel. Collector Current20610S1 axis01020304050607080901000250 500 750 1000 1250 1500 1750 2000IC - Collector Current ( A)tr/tf - Rise/Fall Time ( s)tftr20599RL = 100 1388774 HCT14 GNDIF = 15 mA+ VC = 5 V 10 k VEUQ050100150200250300050100150200250300 Time (s)Temperature ( C)240 C245 Cmax.
8 260 Cmax. 120 smax. 100 s217 Cmax. 30 smax. ramp up 3 C/smax. ramp down 6 C/s19841255 Semiconductors Rev. , 06-Nov-156 Document Number: 84174 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimetersDrawing-No.: : 1; connectiontop viewEmitter sidewider contact forpin-identificationMaterial indicated tolerances drawingsaccording to sideMarking areaEjector gatelocationOptical solderpad Semiconductors Rev. , 06-Nov-157 Document Number: 84174 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimetersAE to E directionLabel postedhereReel-design is representative for different typesEmpty leader 400 mm min.(empty trailer 200 mm min.) 62 : : 1; 13 Legal Disclaimer Revision: 09-Jul-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.
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