Optocoupler, Phototriac Output, Zero Crossing, …

1 Document Number: 83627 For technical questions, contact: , 29-Mar-111 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , Phototriac output , zero Crossing, High dV/dt, Low Input CurrentIL410, IL4108 vishay Semiconductors DESCRIPTIONThe IL410 and IL4108 consists of a GaAs IRLED opticallycoupled to a photosensitive zero crossing TRIAC TRIAC consists of two inverse parallel connectedmonolithic SCRs. These three semiconductors areassembled in a six pin dual in-line input sensitivity is achieved by using an emitterfollower phototransistor and a cascaded SCR predriverresulting in an LED trigger current of less than 2 mA (DC).

2 The use of a proprietary dV/dt clamp results in a static dV/dtof greater than 10 kV/ms. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur betweenMT1 and MT2 of the TRIAC. When conducting, the FETclamps the base of the phototransistor, disabling the firststage SCR zero cross line voltage detection circuit consists of twoenhancement MOSFETS and a photodiode. The inhibitvoltage of the network is determined by the enhancementvoltage of the N-channel FET. The P-channel FET is enabledby a photocurrent source that permits the FET to conductthe main voltage to gate on the N-channel FET.

3 Once themain voltage can enable the N-channel, it clamps the baseof the phototransistor, disabling the first stage 600 V, 800 V blocking voltage permits control of off-linevoltages up to 240 VAC, with a safety factor of more thantwo, and is sufficient for as much as 380 IL410, IL4108 isolates low-voltage logic from 120 VAC,240 VAC, and 380 VAC lines to control resistive, inductive, orcapacitive loads including motors, solenoids, high currentthyristors or TRIAC and High input sensitivity IFT = 2 mA, PF = IFT = 5 mA, PF 300 mA on-state current zero voltage crossing detector 600 V, 800 V blocking voltage High static dV/dt 10 kV/ s Very low leakage < 10 A Isolation test voltage 5300 VRMS Small 6 pin DIP package Compliant to RoHS Directive 2002/95/EC and inaccordance to WEEE 2002/96/ECAPPLICATIONS Solid-state relays Industrial controls Office equipment Consumer appliancesAGENCY APPROVALS UL1577, file no.

4 E52744 system code H, double protection CSA 93751 DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5(pending), available with option 1 Note(1)Also available in tubes, do not put T on the * zero crossing circuitZCC*VDE21842-1 ORDERING INFORMATIONI L410#-X0##TPART NUMBERPACKAGE OPTIONTAPE AND REELAGENCY CERTIFIED/PACKAGEBLOCKING VOLTAGE VDRM (V)UL600800 DIP-6IL410IL4108 DIP-6, 400 mil, option 6IL410-X006IL4108-X006 SMD-6, option 7IL410-X007T (1)IL4108-X007T (1)SMD-6, option 8IL410-X008T-SMD-6, option 9IL410-X009T (1)IL4108-X009T (1)VDE, UL600800 DIP-6IL410-X001IL4108-X001 DIP-6, 400 mil, option 6IL410-X016IL4108-X016 SMD-6, option 7IL410-X017IL4108-X017 SMD-6, option 9IL410-X019T (1)-> mm> mmDIP-# Option 7 Option 6 Option mmOption 8 technical questions, contact: Number: 836272 Rev.

5 , 29-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , IL4108 vishay SemiconductorsOptocoupler, Phototriac output , zero Crossing, High dV/dt, Low Input Current Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is notimplied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolutemaximum ratings for extended periods of the time can adversely affect reliability.

6 (1)Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throughhole devices (DIP).ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONPARTSYMBOLVALUEUNITINPUTR everse voltageVR6 VForward currentIF60mASurge dissipationPdiss100mWDerate from 25 COUTPUTPeak off-state voltageIL410 VDRM600 VIL4108 VDRM800 VRMS on-state currentITM300mASingle cycle surge current3 ATotal power dissipationPdiss500mWDerate from 25 CCOUPLERI solation test voltagebetween emitter and detectort = 1 sVISO5300 VRMSP ollution degree (DIN VDE 0109)

7 2 Creepage distance 7mmClearance distance 7mmComparative tracking index perDIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 CTI 175 Isolation resistanceVIO = 500 V, Tamb = 25 CRIO 1012 VIO = 500 V, Tamb = 100 CRIO 1011 Storage temperature rangeTstg- 55 to + 150 CAmbient temperatureTamb- 55 to + 100 CSoldering temperature (1)max. 10 s dip soldering mm from case bottomTsld260 C Document Number: 83627 For technical questions, contact: , 29-Mar-113 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , IL4108 optocoupler , Phototriac output , zero Crossing, High dV/dt, Low Input CurrentVishay Semiconductors Note Minimum and maximum values are testing requirements.

8 Typical values are characteristics of the device and are the result of engineeringevaluation. Typical values are for information only and are not part of the testing CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST voltageIF = 10 currentVR = 6 AInput capacitanceVF = 0 V, f = 1 MHzCIN25pFThermal resistance, junction to ambientRthja750 C/WOUTPUTOff-state currentVD = VDRM, Tamb = 100 C, IF = 0 mAIDRM10100 AOn-state voltageIT = 300 (non-repetitive), on-state currentf = 50 HzITSM3 ATrigger current 1VD = 5 VIFT12mATrigger current 2VD = 220 VRMS, f = 50 Hz, Tj = 100 C, tpIF > 10 msIFT26mATrigger current temp. gradient IFT1/ Tj714 A/ C IFT2/ Tj714 A/ CInhibit voltage temp.

9 Gradient VDINH/ Tj- 20mV/ COff-state current in inhibit stateIF = IFT1, VD = VDRMIDINH50200 AHolding currentIH65500 ALatching currentVT = VIL500 AZero cross inhibit voltageIF = rated IFTVIH1525 VCritical rate of rise of off-state voltageVD = VDRM, Tj = 25 CdV/dtcr10 000V/ sVD = VDRM, Tj = 80 CdV/dtcr5000V/ sCritical rate of rise of voltage at current commutationVD = 230 VRMS,ID = 300 mARMS, TJ = 25 CdV/dtcrq8V/ sVD = 230 VRMS,ID = 300 mARMS, TJ = 85 CdV/dtcrq7V/ sCritical rate of rise of on-state current commutationVD = 230 VRMS,ID = 300 mARMS, TJ = 25 CdI/dtcrq12A/msThermal resistance, junction to ambientRthja150 C/WCOUPLERC ritical rate of rise of coupledinput/ output voltageIT = 0 A, VRM = VDM = VDRMdVIO/dt10 000V/ sCommon mode coupling (input to output )f = 1 MHz, VIO = 0 resistanceVIO = 500 V, Tamb = 25 CRIO 1012 VIO = 500 V, Tamb = 100 CRIO 1011 SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST timeVRM = VDM = VDRMton35 s technical questions, contact: Number: 836274 Rev.

10 , 29-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , IL4108 vishay SemiconductorsOptocoupler, Phototriac output , zero Crossing, High dV/dt, Low Input Current TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 1 - Forward Voltage vs. Forward Current Fig. 2 - Peak LED Current vs. Duty Factor, Fig. 3 - Maximum LED Power Dissipation Fig. 4 - Typical output Characteristics Fig. 5 - Current Reduction Fig. 6 - Current - Forward Current (mA)VF - Forward Voltage (V)TA = - 55 CTA = 25 CTA = 85 Ciil410_0410-610-510-410-310-210-1100101 10100100010 000t - LED Pulse Duration (s)If(pk) - Peak LED Current (mA) Factort DF = /t iil410_05100806040200- 20- 40- 60050100150TA - Ambient Temperature ( C)LED - LED Power (mW)10310210155510001243iil410_06IT = f(VT),Parameter: TjTj = 25 C 100 CIT (mA)VT (V)4003002001000020406080100iil410_07 ITRMS (mA)TA ( C)ITRMS = f(VT),RthJA = 150 K/WDevice switchsoldered in pcbor base (mA)TPIN5 ( C)ITRMS = f(TPIN5), RthJ-PIN5 = K/WThermocouple measurement mustbe performed potentially separatedto A1 and A2.