Optocoupler, Phototransistor Output, AC Input, …

1 Semiconductors Rev. , 08-Jan-141 Document Number: 83466 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , Phototransistor output , ac input , Low input Current, SSOP-4, Half Pitch, Mini-Flat PackageDESCRIPTIONThe VOS628A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar Phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat features a high current transfer ratio at low input current, low coupling capacitance, and high isolation coupling devices are designed for signal transmission between two electrically separated High CTR with low input current Low profile package (half pitch) High collector emitter voltage VCEO = 80 V Isolation test voltage = 3750 VRMS Low coupling capacitance High common mode transient immunity Material categorization: For definitions of compliance please see APPLICATIONS Telecom Industrial controls Battery powered equipment Office machines Programmable controllersAGENCY APPROVALSS afety application model number covering all products in this datasheet is VOS628A.

2 This model number should be used when consulting safety agency documents. UL1577, file no. E52744 cUL DIN EN 60747-5-5 (VDE 0884-5), available with option 1 FIMKO EN 60065, EN 60950-1 CQC and GB8898-2011 (suitable for installation altitude below 2000 m)Note Additional options may be possible, please contact sales INFORMATIONVOS628A-#X001 TPART NUMBERCTR BINPACKAGE OPTION TAPE AND REELAGENCY CERTIFIED/PACKAGECTR (%) 1 mAUL, cUL, FIMKO, CQC50 to 60063 to 125100 to 200 SSOP-4, 50 mil pitchVOS628 ATVOS628A-2 TVOS628A-3 TUL, cUL, FIMKO, CQC, VDE (option 1)50 to 60063 to 125100 to 200 SSOP-4, 50 mil pitchVOS628A-X001 TVOS628A-2X001 TVOS628A-3X001 TSSOP-4 5 Semiconductors Rev. , 08-Jan-142 Document Number: 83466 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.

3 Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.(1)Refer to reflow profile for soldering conditions for surface mounted devices. Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient TemperatureABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITINPUTR everse voltageVR6 VPower dissipationPdiss70mWSurge forward currenttp 10 currentIF50mAOUTPUTC ollector emitter voltageVCEO80 VEmitter collector voltageVECO7 VCollector currentIC50mAtp/T = , tp < 10 msIC100mAPower dissipationPdiss150mWCOUPLERI solation test voltage between emitter and detectort = 1 minVISO3750 VRMST otal power dissipationPtot170mWStorage temperature rangeTstg-55 to +150 CAmbient temperature rangeTamb-55 to +110 CJunction temperatureTj125 CSoldering temperature (1)Tsld260 C0 20 40 60 80 100 120 140 160 - 25 0 25 50 75 100 125 Pdiss - Collector Power Dissipation (mW) Tamb - Ambient Temperature ( C)

4 0 10 20 30 40 50 60 - 25 0 25 50 75 100 125 IF - Forward Current (mA) Tamb - Ambient Temperature ( C) Semiconductors Rev. , 08-Jan-143 Document Number: 83466 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Fig. 3 - Test Circuit Fig. 4 - Test Circuit and WaveformsELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETERTEST Forward voltageIF = 50 currentVR = 6 ACapacitanceVR = 0 V, f = 1 MHzCO8pFOUTPUTC ollector emitter leakage currentVCE = 10 emitter breakdown voltageIC = 100 ABVCEO80 VEmitter collector breakdown voltageIE = 10 ABVECO7 VCollector emitter capacitanceVCE = 5 V, f = 1 MHzCCE6pFCOUPLERC ollector emitter saturation voltageIF = 1 mA, IC = frequencyIF = 10 mA, VCC = 5 V, RL = 100 fctr119kHzCURRENT TRANSFER RATIO (Tamb = 25 C, unless otherwise specified) PARAMETERTEST = 1 mA, VCE = 5 VVOS628 ACTR50600%VOS628A-2 CTR63125%VOS628A-3 CTR100200%SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

5 PARAMETERTEST on timeVCC = 5 V, IC = 2 mA, RL = 100 ton5 sRise timetr5 sTurn off timetoff8 sFall timetf7 sSATURATEDRise and fall timeIF = mA, VCC = 5 V, RL = k tr10 sFall timetf11 sTurn on timeton14 sTurn off timetoff12 sVOUTVCC = 5 VRL IFisfh618a_1210 %90 % input pulseOutput Semiconductors Rev. , 08-Jan-144 Document Number: 83466 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT As per IEC 60747-5-5, , this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 5 - Forward Voltage vs. Forward Current Fig. 6 - Collector Current vs.

6 Collector Emitter VoltageSAFETY AND INSULATION RATINGS PARAMETERSYMBOLVALUEUNITMAXIMUM SAFETY RATINGSO utput safety powerPSO300mWInput safety currentIsi200mASafety temperatureTS150 CComparative tracking indexCTI175 INSULATION RATED PARAMETERSM aximum withstanding isolation voltage40 % to 60 % RH, AC test of 1 minVISO3750 VRMSM aximum transient isolation voltageVIOTM6000 VpeakMaximum repetitive peak isolation voltageVIORM565 VpeakInsulation resistanceTamb = 25 C, VDC = 500 VRIO 1012 Isolation resistanceTamb = 100 C, VDC = 500 VRIO 1011 Climatic classification (according to IEC 68 part 1)55/110/21 Environment (pollution degree in accordance to DIN VDE 0109)2 Creepage distance 5mmClearance distance 5mmInsulation thicknessDTI 1 10 100 IF - Forward Current (mA) VF - Forward Voltage (V) Tamb = 110 C Tamb = 75 C Tamb = 25 C Tamb = 0 C Tamb = - 55 C 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 IC - Collector Current (mA) VCE - Collector Emitter Voltage (V)IF = 1 mA IF = 10 mA IF = 5 mA IF = 15 mA IF = 20 mA IF = 25 mA Semiconductors Rev.

7 , 08-Jan-145 Document Number: 83466 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 7 - Collector Emitter Current vs. Ambient Temperature Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Collector Emitter Voltage vs. Ambient Temperature Fig. 10 - Normalized Current Transfer Ratio Temperature Fig. 11 - Normalized Current Transfer Ratio Temperature Fig. 12 - Current Transfer Ratio vs. Forward 000- 60 - 40 - 20 020 40 60 80120 ICE0- Leakage Current (nA)Tamb- Ambient Temperature ( C)IF= 0 mAVCE= 40 VVCE= 24 VVCE= 12 V1000 5 10 15 20 25 30 35 IC - Collector Current (mA) VCE - Collector Emitter Voltage (V) IF = 25 mA IF = 10 mA IF = mA IF = 2 mA IF = 5 mA IF = 1 mA - 60 - 40 - 20 0 20 40 60 80 100 120 VCEsat - Collector Emitter Voltage (V) Tamb - Ambient Temperature ( C) IF = 1 mA 0 - 60 - 40 - 20 0 20 40 60 80 100 120 NCTR - Normalized CTR (saturated)Tamb - Ambient Temperature ( C) Normalized to CTR value.

8 IF = 1 mA, VCE = 5 V, Tamb = 25 C 0 - 60 - 40 - 20 0 20 40 60 80 100 120 NCTR - Normalized CTR (non-saturated) Tamb - Ambient Temperature ( C) Normalized to CTR value: IF = 1 mA, VCE = 5 V, Tamb = 25 C 1 10 100 NCTR - Normalized CTR (sat) IF - Forward Current (mA) Tamb = 0 C Tamb = - 55 C Tamb = 25 C Tamb = 110 C Normalized to:IF = 1 mA, VCE = 5 V,Tamb = 25 Semiconductors Rev. , 08-Jan-146 Document Number: 83466 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 13 - Current Transfer Ratio vs. Forward Current Fig. 14 - Frequency (- 3 dB) vs. Collector Current Fig.

9 15 - Frequency vs. Phase Angle Fig. 16 - Switching Time vs. Load Resistance Fig. 17 - Voltage Gain vs. 1 10 100 NCTR - Normalized CTR (NS) IF - Forward Current (mA) Tamb = 0 C Tamb = - 55 C Tamb = 25 C Tamb = 110 C Normalized to:IF = 1 mA, VCE = 5 V,Tamb = 25 - Frequency (kHz)1001011 10100IC - Collector Current (mA)VCE = 5 V- 160 - 140 - 120 - 100 - 80 - 60 - 40 - 20 0 1 10 100 1000 Phase Angle (deg)f - Frequency (kHz) VCE= 5 V RL = 1000 RL = 100 110100100005101520ton, toff - Switching Time ( s)RL - Load Resistance (k )ton ( s)toff ( s)IC = 2 mAVCE= 5 V-40-35-30-25-20-15-10-501 10 100 1000 Voltage Gain (dB) f - Frequency (kHz)VCE = 5 V RL = 100 RL = 1000 Semiconductors Rev.

10 , 08-Jan-147 Document Number: 83466 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimetersPACKAGE MARKING (example of VOS628A-3X001T)Notes Option 1 is reflected with letter X . Tape and reel suffix (T) is not part of the package marking. VOS628AT can be marked as 628A1, 628A2, 628A3, or 628A4. VOS628A-X001T is marked as 628A1X, 628A2X, 628A3X, or AND REEL DIMENSIONS in millimeters Fig. 18 - Reel Dimensions (3000 units per reel) + FootprintV YWW 25628A3 XPin 1 dimple330(13") Semiconductors Rev. , 08-Jan-148 Document Number: 83466 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig.