Optocoupler, Phototransistor Output, SSOP-4, Half …

1 Semiconductors Rev. , 08-Jan-141 Document Number: 83497 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , Phototransistor Output, ssop -4, Half Pitch, Mini-Flat PackageDESCRIPTIONThe VOS617A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar Phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat features a high current transfer ratio at low input current, low coupling capacitance, and high isolation coupling devices are designed for signal transmission between two electrically separated High CTR with low input current Low profile package (half pitch) High collector emitter voltage, VCEO = 80 V Isolation test voltage = 3750 VRMS Low coupling capacitance High common mode transient immunity Material categorization: For definitions of compliance please see APPLICATIONS Telecom Industrial controls Battery powered equipment Office machines Programmable controllersAGENCY APPROVALSS afety application model number covering all products in this datasheet is VOS617A.

2 This model number should be used when consulting safety agency documents. UL1577, file no. E52744 cUL DIN EN 60747-5-5 (VDE 0884-5), available with option 1 FIMKO EN 60065, EN 60950-1 CQC and GB8898-2011 (suitable for installation altitude below 2000 m)Note Additional options may be possible, please contact sales INFORMATIONVOS617A-#X001 TPART NUMBERCTR BINPACKAGE OPTION TAPE AND REELAGENCY CERTIFIED/ PACKAGECTR (%)5 mAUL, cUL, FIMKO, CQC50 to 60063 to 125100 to 200160 to 32080 to 160130 to 260200 to 400 ssop -4, 50 mil pitchVOS617 ATVOS617A-2 TVOS617A-3 TVOS617A-4 TVOS617A-7 TVOS617A-8 TVOS617A-9 TUL, CUL, FIMKO, CQC, VDE (option 1)

3 50 to 60063 to 125100 to 200160 to 32080 to 160130 to 260200 to 400 ssop -4, 50 mil pitchVOS617A-X001 TVOS617A-2X001 TVOS617A-3X001 TVOS617A-4X001 TVOS617A-7X001 TVOS617A-8X001 TVOS617A-9X001 TSSOP-4 5 Semiconductors Rev. , 08-Jan-142 Document Number: 83497 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document.

4 Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.(1)Refer to reflow profile for soldering conditions for surface mounted devices. Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient TemperatureABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITINPUTR everse voltageVR6 VPower dissipationPdiss70mWSurge forward currenttp 10 currentIF50mAOUTPUTC ollector emitter voltageVCEO80 VEmitter collector voltageVECO7 VCollector currentIC50mAPower dissipationPdiss150mWCOUPLERI solation test voltage between emitter and detectort = 1 minVISO3750 VRMST otal power dissipationPtot170mWStorage temperature rangeTstg-55 to +150 CAmbient temperature rangeTamb-55 to +110 CJunction temperatureTj125 CSoldering temperature (1)

5 T = 10 sTsld260 C0 20 40 60 80 100 120 140 160 - 25 0 25 50 75 100 125 Pdiss - Collector Power Dissipation (mW) Tamb - Ambient Temperature ( C) 0 10 20 30 40 50 60 - 25 0 25 50 75 100 125 IF - Forward Current (mA) Tamb - Ambient Temperature ( C) Semiconductors Rev. , 08-Jan-143 Document Number: 83497 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation.

6 Typical values are for information only and are not part of the testing requirements. Fig. 3 - Test Circuit Fig. 4 - Test Circuit and WaveformsELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETERTEST Forward voltageIF = 50 currentVR = 6 ACapacitanceVR = 0 V, f = 1 emitter leakage currentVCE = 10 emitter breakdown voltageIC = 100 ABVCEO80 VEmitter collector breakdown voltageIE = 10 ABVECO7 VCollector emitter capacitanceVCE = 5 V, f = 1 MHzCCE5pFCOUPLERC ollector emitter saturation voltageIF = 5 mA, IC = frequencyIF = 10 mA, VCC = 5 V, RL = 100 fctr155kHzCURRENT TRANSFER RATIO (Tamb = 25 C, unless otherwise specified)

7 PARAMETERTEST = 5 mA, VCE = 5 VVOS617 ACTR50600%VOS617A-2 CTR63125%VOS617A-3 CTR100200%VOS617A-4 CTR160320%VOS617A-7 CTR80160%VOS617A-8 CTR130260%VOS617A-9 CTR200400%SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST and fall timeIC = 2 mA, VCC = 5 V,RL = 100 tr3 sFall timetf3 sTurn-on timeton6 sTurn-off timetoff4 sSATURATEDRise and fall timeIF = mA, VCC = 5 V,RL = k tr3 sFall timetf12 sTurn-on timeton4 sTurn-off timetoff18 sisfh618a_10 InputVOUTVCC = 5 VRLisfh618a_1210 %90 %Input pulseOutput Semiconductors Rev. , 08-Jan-144 Document Number: 83497 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT As per IEC 60747-5-5, , this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 5 - Forward Voltage vs. Forward Current Fig. 6 - Collector Current vs. Collector Emitter Voltage SAFETY AND INSULATION RATINGS PARAMETERSYMBOLVALUEUNITMAXIMUM SAFETY RATINGSO utput safety powerPSO300mWInput safety currentIsi200mASafety temperatureTS150 CComparative tracking indexCTI175 INSULATION RATED PARAMETERSM aximum withstanding isolation voltage40 % to 60 % RH, AC test of 1 minVISO3750 VRMSM aximum transient isolation voltageVIOTM6000 VpeakMaximum repetitive peak isolation voltageVIORM565 VpeakInsulation resistanceTamb = 25 C, VDC = 500 VRIO 1012 Isolation resistanceTamb = 100 C, VDC = 500 VRIO 1011 Climatic classification (according to IEC 68 part 1)

9 55/110/21 Environment (pollution degree in accordance to DIN VDE 0109)2 Creepage distance 5mmClearance distance 5mmInsulation thicknessDTI 1 10 100 IF - Forward Current (mA) VF - Forward Voltage (V) Tamb = 110 C Tamb = 75 C Tamb = 25 C Tamb = 0 C Tamb = - 55 C 0 5 10 15 20 25 30 35 40 45 50 55 0 1 2 3 4 5 6 7 8 9 10 IC - Collector Current (mA) VCE - Collector Emitter Voltage (non-sat) (V) IF = 30 mA IF = 35 mA IF = 1 mA IF = 20 mA IF = 15 mA IF = 10 mA IF = 5 mA IF = 25 mA Semiconductors Rev. , 08-Jan-145 Document Number: 83497 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

10 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 7 - Leakage Current vs. Ambient Temperature Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Normalized Current Transfer Ratio (non-saturated) Temperature Fig. 10 - Normalized Current Transfer Ratio (saturated) Temperature Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature Fig. 12 - Normalized CTR (non-saturated) vs. Forward 000- 60 - 40 - 20 020 40 60 80120 ICE0- Leakage Current (nA)Tamb- Ambient Temperature ( C)IF= 0 mAVCE= 40 VVCE= 24 VVCE= 12 Collector Current (mA)VCE- Collector Emitter Voltage (V)IF= 1 mAIF= 10 mAIF= 5 mAIF= 2 mA0 - 60 - 40 - 20 0 20 40 60 80 100 120 NCTR - Normalized CTR (non-saturated)Tamb - Ambient Temperature ( C) Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 C IF = 5 mA 0 - 60 - 40 - 20 0 20 40 60 80 100 120 NCTR - Normalized CTR (sat) Tamb - Ambient Temperature ( C) IF= 5 mA Normalized to CTR value.