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High Current Density Surface Mount High Voltage Schottky ...

ss10ph9 , ss10ph10 . vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifiers FEATURES. eSMP Series Power pack Available Very low profile - typical height of mm K. Ideal for automated placement Guardring for overvoltage protection 1 High barrier technology, TJ = 175 C maximum 2 Low leakage Current Meets MSL level 1, per J-STD-020. TO-277A (SMPC) AEC-Q101 qualified available . K Anode 1. - Automotive ordering code: base P/NHM3. Cathode Anode 2 Material categorization: for definitions of compliance please see PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS. IF(AV) 10 A For use in high frequency rectifier of switching mode VRRM 90 V, 100 V power supplies, freewheeling diodes, DC/DC converters, or IFSM 200 A.

SS10PH9, SS10PH10 www.vishay.com Vishay General Semiconductor Revision: 23-Dec-14 3 Document Number: 89000 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

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Transcription of High Current Density Surface Mount High Voltage Schottky ...

1 ss10ph9 , ss10ph10 . vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifiers FEATURES. eSMP Series Power pack Available Very low profile - typical height of mm K. Ideal for automated placement Guardring for overvoltage protection 1 High barrier technology, TJ = 175 C maximum 2 Low leakage Current Meets MSL level 1, per J-STD-020. TO-277A (SMPC) AEC-Q101 qualified available . K Anode 1. - Automotive ordering code: base P/NHM3. Cathode Anode 2 Material categorization: for definitions of compliance please see PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS. IF(AV) 10 A For use in high frequency rectifier of switching mode VRRM 90 V, 100 V power supplies, freewheeling diodes, DC/DC converters, or IFSM 200 A.

2 Polarity protection application. EAS 20 mJ MECHANICAL DATA. VF at IF = 10 A V Case: TO-277A (SMPC) . IR A Molding compound meets UL 94 V-0 flammability rating TJ max. 175 C Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade . Package TO-277A (SMPC). Base P/NHM3 - halogen-free, RoHS-compliant, and Diode variations Single die AEC-Q101 qualified . Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified . ( _X denotes revision code A, B, ..). Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 . M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 C unless otherwise noted).

3 PARAMETER SYMBOL ss10ph9 ss10ph10 UNIT. Device marking code 10H9 10H10. Maximum repetitive peak reverse Voltage VRRM 90 100 V. Maximum average forward rectified Current (fig. 1) IF(AV) 10 A. Peak forward surge Current 10 ms single half sine-wave . IFSM 200 A. superimposed on rated load Non-repetitive avalanche energy . EAS 20 mJ. at IAS = A, TJ = 25 C. Operating junction and storage temperature range TJ, TSTG -55 to +175 C. Revision: 23-Dec-14 1 Document Number: 89000. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT.

4 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ss10ph9 , ss10ph10 . vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted). PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT. IF = 5 A - TA = 25 C. IF = 10 A Instantaneous forward Voltage VF (1) V. IF = 5 A - TA = 125 C. IF = 10 A TA = 25 C 10 A. Reverse Current Rated VR IR (2). TA = 125 C 3 mA. Typical junction capacitance V, 1 MHz CJ 270 - pF. Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise specified). PARAMETER SYMBOL ss10ph9 ss10ph10 UNIT.

5 R JA (1) 60. Typical thermal resistance C/W. R JL 3. Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example). PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE. ss10ph10 -M3/86A 86A 1500 7" diameter plastic tape and reel ss10ph10 -M3/87A 87A 6500 13" diameter plastic tape and reel SS10PH10HM3/86A (1) 86A 1500 7" diameter plastic tape and reel SS10PH10HM3/87A (1) 87A 6500 13" diameter plastic tape and reel SS10PH10HM3_A/H (1) H 1500 7" diameter plastic tape and reel SS10PH10HM3_A/I (1) I 6500 13" diameter plastic tape and reel Note (1). AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise specified).

6 12 Average Forward Rectified Current (A). Resistive or Inductive Load 10 D = Average Power Loss (W). D = 8 D = D = 6 D = D = 4 T. TL measured 2 at the Cathode Band Terminal D = tp/T tp 0 0. 25 50 75 100 125 150 175 0 1 2 3 4 5 6 7 8 9 10 11. Lead Temperature ( C) Average Forward Current (A). Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 23-Dec-14 2 Document Number: 89000. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ss10ph9 , ss10ph10 .

7 vishay General Semiconductor 100 100. Transient Thermal Impedance ( C/W). Junction to Ambient Instantaneous Forward Current (A). TA = 175 C. 10. TA = 150 C. 1 TA = 125 C 10. TA = 25 C. 1. 1 10 100. Instantaneous Forward Voltage (V) t - Pulse Duration (s). Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance 10. Instantaneous Reverse Current (mA). TA = 175 C. 1 TA = 150 C. TA = 125 C. TA = 25 C. 10 20 30 40 50 60 70 80 90 100. Percent of Rated Peak Reverse Voltage (%). Fig. 4 - Typical Reverse Characteristics 1000. TJ = 25 C. f = MHz Vsig = 50 mVp-p Junction Capacitance (pF).

8 100. 10. 1 10 100. Reverse Voltage (V). Fig. 5 - Typical Junction Capacitance Revision: 23-Dec-14 3 Document Number: 89000. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ss10ph9 , ss10ph10 . vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters). TO-277A (SMPC). ( ). ( ) ( ). ( ). K. ( ). ( ). ( ). ( ). 2 1. ( ). ( ) ( ). ( ). ( ). ( ) Mounting Pad Layout ( ) ( ). ( ) MIN. ( ). ( ) ( ). MIN. ( ) NOM. ( ). ( ) NOM. ( ) ( ). ( ) MIN.

9 ( ) NOM. ( ) ( ). ( ) ( ) MIN. Conform to JEDEC TO-277A. Revision: 23-Dec-14 4 Document Number: 89000. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Legal Disclaimer Notice vishay Disclaimer . ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE. RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

10 vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on vishay 's knowledge of typical requirements that are often placed on vishay products in generic applications.


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