P-Channel 80-V (D-S) MOSFET - Vishay Intertechnology

1 Vishay SiliconixSi7469 DPDocument Number: 73438S09-0271-Rev. C, 80-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET Power MOSFETPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)aQg (Typ.)- at VGS = - 10 V - 2855 at VGS = - V - 28 Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free)Si7469DP-T1-GE3 (Lead (Pb)-free and Halogen-free) mmPowerPAK SO-8 Bottom ViewSGDP- channel MOSFETN otes: a. Package Surface Mounted on 1" x 1" FR4 t = 10 See Solder Profile ( ). The PowerPAK SO-8 is a leadless package.

2 The end of the lead terminal is exposed copper(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is notrequired to ensure adequate bottom side solder Rework Conditions: manual soldering with a soldering iron is not recommended for leadless Maximum under Steady State conditions is 65 C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol LimitUnit Drain-Source Voltage VDS- 80 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)

3 TC = 25 CID- 28aATC = 70 C- 28aTA = 25 C- , cTA = 70 C- , cPulsed Drain Current IDM- 40 Continuous Source-Drain Diode CurrentTC = 25 CIS- 28aTA = 25 C- , cAvalanche CurrentL = mHIAS- 45 Single-Pulse Avalanche EnergyEAS100mJMaximum Power DissipationTC = 25 CPD83 WTC = 70 C53TA = 25 , cTA = 70 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CSoldering Recommendations (Peak Temperature)d, e260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientb, ft 10 sRthJA1924 C/WMaximum Junction-to-Case (Drain)Steady Number: 73438S09-0271-Rev.

4 C, 16-Feb-09 Vishay SiliconixSi7469 DPNotes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageVDSVGS = 0 V.

5 ID = - 250 A - 80 VVDS Temperature Coefficient VDS/TJ ID = - 250 A - CVGS(th) Temperature Coefficient VGS(th)/TJ Threshold VoltageVGS(th) VDS = VGS, ID = - 250 A - 1- 3 VGate-Source LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = - 80 V, VGS = 0 V - 1 AVDS = - 80 V, VGS = 0 V, TJ = 55 C - 10On-State Drain CurrentaID(on) VDS 5 V, VGS = - 10 V - 40 ADrain-Source On-State ResistanceaRDS(on) VGS = - 10 V, ID = - A VGS = - V, ID = - A Transconductanceagfs VDS = - 15 V, ID = - A 52 SDynamicbInput CapacitanceCissVDS = - 40 V, VGS = 0 V, f = 1 MHz 4700pFOutput CapacitanceCoss320 Reverse Transfer CapacitanceCrss 235 Total Gate ChargeQgVDS = - 40 V, VGS = - 10 V, ID = - A 105160nCVDS = - 40 V, VGS = - V, ID = - A 5585 Gate-Source ChargeQgs 16 Gate-Drain ChargeQgd 26 Gate ResistanceRgf = 1 MHz4 Tu r n - O n D e l a y T i m etd(on)

6 VDD = - 40 V, RL = ID - A, VGEN = - 10 V, Rg = 1 4570nsRise Timetr220330 Turn-Off Delay Timetd(off) 95145 Fall Timetf110165Tu r n - O n D e l a y T i m etd(on) VDD = - 40 V, RL = ID - A, VGEN = - V, Rg = 1 1525nsRise Timetr2540 Turn-Off Delay Timetd(off) 105160 Fall Timetf100150 Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 C - 28 APulse Diode Forward CurrentaISM- 40 Body Diode VoltageVSDIS = - A- Diode Reverse Recovery TimetrrIF = - A, dI/dt = 100 A/ s, TJ = 25 C 5585nsBody Diode Reverse Recovery ChargeQrr110165nCReverse Recovery Fall Timeta37nsReverse Recovery Rise Timetb18 Document Number: 73438S09-0271-Rev.

7 C, SiliconixSi7469 DPTYPICAL CHARACTERISTICS 25 C, unless otherwise notedOutput CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate = 10 V thru 4 V3 VVDS - Drain-to-Source Voltage (V)ID - Drain Current (A) = 10 VID - Drain Current (A)VGS = VRDS(on) - On-Resistance ( )02468100 20406080100120ID = A- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VGSVDS = 64 VVDS = 40 VTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction CTA = 125 CVGS - Gate-to-Source Voltage (V)ID - Drain Current (A)- 55 C0100020003000400050006000700080000 1020304050607080 CossCissVDS - Drain-to-Source Voltage (V)C - Capacitance (pF) 50- 250255075100125150 VGS = 10 V TJ - Junction Temperature ( C)RDS(on) - On-Resistance(Normalized)ID = AVGS = Number: 73438S09-0271-Rev.

8 C, 16-Feb-09 Vishay SiliconixSi7469 DPTYPICAL CHARACTERISTICS 25 C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold = 25 CTJ = 150 CVSD - Source-to-Drain Voltage (V)IS - Source Current (A) 50- 250255075100125150ID = 250 A TJ - Temperature ( C)VGS(th) (V)On-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, VGS - Gate-to-Source Voltage (V)RDS(on) - Drain-to-Source On-Resistance ( )TA= 25 CTA = 125 C02035510 Power (W)Time (s) Operating Area, - Drain Current (A) VDS - Drain-to-Source Voltage (V)* VGS > minimum VGS at which RDS(on) is ms10 ms100 msDC1 s10 sTA = 25 CSingle Pulse100 sLimited byRDS(on)*Document Number: 73438S09-0271-Rev.

9 C, SiliconixSi7469 DPTYPICAL CHARACTERISTICS 25 C, unless otherwise noted* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the Derating*Single Pulse Avalanche Capability010203040500255075100125150ID - Drain Current (A)TC - Case Temperature ( C)Package - Time In Avalanche (s)IC - Peak Avalanche Current (A)TA= - Derating020406080100255075100125150TC - Case Temperature ( C)Power (W) Number: 73438S09-0271-Rev.

10 C, 16-Feb-09 Vishay SiliconixSi7469 DPTYPICAL CHARACTERISTICS 25 C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal Impedance1.